Epitaxial Semiconductor Structure With Etch-Stop Sidewall Protection
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Solution Overview
Problem
Existing semiconductor optoelectronic devices face challenges in achieving efficient light emission and protection of sensitive components during manufacturing processes, particularly in miniaturized devices, where structural integrity and electrical connections are critical.
Innovation Solution
The semiconductor device incorporates an epitaxial structure with a first and second semiconductor layer, an insulating structure, a stop layer, and electrodes, where the second semiconductor layer has varying widths and is protected by an insulating structure and a stop layer, which also serves as an etching stop, while electrodes provide electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the semiconductor device is miniaturized to improve integration density, then productivity and device density are improved, but structural integrity and reliability deteriorate
Solution Approach 1:
The device is segmented into distinct functional regions: a first region with a first conductivity type and a second region with a second conductivity type. This segmentation allows each region to be optimized independently for its specific function while maintaining overall structural integrity in miniaturized devices.
Solution Approach 2:
Different regions of the semiconductor device are assigned different local properties: the first region has first doping concentration and first conductivity type, while the second region has second doping concentration and second conductivity type. This local quality differentiation enables optimized electrical performance and structural stability at each location despite miniaturization.
2Productivity
If the semiconductor device is miniaturized to improve integration density, then productivity is improved, but manufacturing precision deteriorates
Solution Approach 1:
The device structure is divided into discrete first and second regions with clearly defined boundaries and different conductivity types. This segmentation simplifies the manufacturing process by allowing each region to be formed and controlled independently, maintaining manufacturing precision even as overall device size is reduced.
Solution Approach 2:
Each region is engineered with specific local properties (doping concentration, conductivity type) that can be precisely controlled during manufacturing. This local quality approach enables high manufacturing precision in critical areas while allowing overall device miniaturization.
3Reliability
If the second semiconductor layer has varying widths to optimize electrical performance, then electrical conductivity is improved, but manufacturing complexity increases
Solution Approach 1:
The second semiconductor layer features varying widths at different locations, creating local quality variations that optimize electrical conductivity. The wider portions provide better current conduction paths while narrower portions allow for compact device layout, achieving enhanced electrical performance without excessive overall complexity.
Solution Approach 2:
The varying width structure of the second semiconductor layer is implemented as distinct segments or regions rather than continuous complex shaping. This segmentation simplifies manufacturing by allowing each width variation to be formed as a discrete feature, reducing overall manufacturing complexity while maintaining electrical optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the structural integrity and electrical performance of the device, allowing for efficient light emission and protection against damage during processing, thereby improving yield and reliability in miniaturized semiconductor optoelectronic devices.
Implementation Method 1
By introducing current, carriers combine in the active region and emit light
Data Source
AI summary
A semiconductor device is provided, which includes an epitaxial structure, a first electrode, an insulating structure, a stop layer, and a second electrode. The epitaxial structure includes a first semiconductor layer, a second semiconductor layer and an active region located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first portion and a second portion. The first portion has a first side surface. The first electrode is located under the first semiconductor layer. The insulating structure distributed on the first side surface and having an opening which corresponds to the first electrode. The stop layer contacts the insulating structure distributed on the first side surface. The second electrode is located on the second semiconductor layer. The first portion has a first width, and the second portion has a second width less than the first width.