Epitaxial Reaction Chamber With Variable Susceptor Geometry
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Solution Overview
Problem
Existing reaction chambers for epitaxial deposition fail to achieve uniform temperature distribution across substrates, leading to non-uniform heating and difficulty in direct temperature measurement during deposition processes.
Innovation Solution
The susceptor assembly in the reaction chamber is designed with varying cross-sections and thicknesses along its longitudinal position to control heat generation, using electromagnetic induction to adjust heating based on longitudinal and transverse positions, thereby optimizing temperature uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the susceptor assembly is designed with uniform cross-section and thickness along the longitudinal direction, then the manufacturing is simple and easy, but the temperature distribution across the substrate becomes non-uniform
Solution Approach 1:
The susceptor assembly is designed with non-uniform cross-sectional area and/or thickness along the longitudinal direction, creating different heating characteristics in different zones. This allows the central zone to have reduced heating contribution compared to the end zones, achieving uniform temperature distribution across the substrate by compensating for the natural heating gradient.
Solution Approach 2:
The susceptor assembly is divided into multiple zones along the longitudinal direction (central zone and end zones) with different geometric properties. This segmentation allows each zone to contribute differently to the overall heating, with the central zone having lower heating power to prevent overheating at the substrate center.
2Temperature
If each axial section of the susceptor assembly contributes equally to heating, then the structure is simple and symmetric, but the temperature uniformity across the substrate cannot be achieved
Solution Approach 1:
Different zones of the susceptor assembly are designed with different cross-sectional areas and/or thicknesses to create localized heating variations. The central zone has reduced dimensions to lower its heating contribution, while the end zones have larger dimensions for higher heating contribution, achieving uniform temperature distribution.
3Temperature
If the susceptor assembly generates uniform heat throughout, then the energy distribution is simple and even, but the temperature profile across the substrate becomes non-uniform with hot spots
Solution Approach 1:
The susceptor assembly is designed with spatially varying cross-sectional area and thickness to create non-uniform energy distribution. The central zone has reduced dimensions resulting in lower energy generation, while the end zones have larger dimensions for higher energy generation, compensating for the natural heat diffusion pattern to achieve uniform substrate temperature.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively varies the heating contribution of the susceptor assembly, achieving improved temperature uniformity and enabling precise temperature control across the substrate surface during deposition processes.
Implementation Method 1
an inductor 9 is wrapped, being adapted to heat by electromagnetic induction the elements 2, 3, 4 and 5 which are made of graphite
Implementation Method 2
heat by electromagnetic induction the elements 2, 3, 4 and 5 which are made of graphite
Implementation Method 3
maintaining a uniform temperature within the reaction and deposition zone
Data Source
AI summary
The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.