Batch Epitaxy Gas Deflectors for Substrate Throughput
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Solution Overview
Problem
The existing methods for forming epitaxial films are limited by the need to process substrates one at a time, which restricts device throughput due to processing restraints with respect to process gas flow.
Innovation Solution
A process chamber design that includes a rotatable substrate support and gas deflectors to direct process gases laterally across multiple substrates, allowing for concurrent epitaxial film formation, enhancing throughput by enabling batch processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If substrates are processed one at a time to maintain epitaxial film quality, then manufacturing precision is improved, but productivity deteriorates
Solution Approach 1:
The gas delivery system is segmented into multiple independent gas inlets (first gas inlet, second gas inlet, third gas inlet) positioned at different locations within the process chamber. Each gas inlet can deliver process gas to specific substrate positions independently, allowing simultaneous processing of multiple substrates while maintaining individual process control for each substrate to ensure epitaxial film quality
Solution Approach 2:
The invention transitions from processing substrates in a single file (one-dimensional sequence) to processing substrates arranged in multiple positions within the chamber (two-dimensional spatial distribution). The rotatable substrate support with multiple substrate positions arranged radially allows concurrent processing of multiple substrates while gas deflectors direct process gas laterally across substrate surfaces from different angular positions
2Productivity
If multiple substrates are processed concurrently to increase throughput, then productivity is improved, but manufacturing precision deteriorates
Solution Approach 1:
Each substrate position has dedicated gas delivery pathways and gas deflectors that can be independently controlled. The gas flow rate, composition, and direction can be locally optimized for each substrate position, ensuring that epitaxial film quality requirements are met for each substrate even when multiple substrates are processed simultaneously
Solution Approach 2:
The substrate support is rotatable, allowing dynamic repositioning of substrates during the processing cycle. This rotation enables different substrate positions to be exposed to process gas from different gas inlets at different times, providing dynamic control over the processing conditions for each substrate to maintain film quality while enabling batch processing
3Productivity
If process gas is directed laterally across multiple substrates using gas deflectors, then productivity is improved, but device complexity increases
Solution Approach 1:
The gas deflectors serve multiple functions: they redirect process gas laterally across substrate surfaces, control gas flow distribution to multiple substrate positions, and work in conjunction with the rotatable substrate support to enable batch processing. This multi-functionality reduces the need for separate complex gas delivery systems for each substrate position
Solution Approach 2:
The gas deflectors act as intermediary components between the gas inlets and the substrates. They mediate the gas flow by redirecting it laterally across the substrate surfaces, enabling uniform gas distribution to multiple substrates without requiring direct gas delivery pathways to each substrate position, thereby simplifying the overall gas delivery system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables uniform epitaxial deposition on multiple substrates simultaneously, significantly increasing substrate throughput and improving processing efficiency.
Implementation Method 1
a first gas deflector coupled to the chamber lid and adapted to direct the first process gas laterally across surfaces of a plurality of substrates
Implementation Method 2
a plurality of lamps disposed between the centrally disposed gas inlet and the one or more gas outlets
Implementation Method 3
The substrate support is rotatable and includes a gas passage formed therein. The gas passage introduces a second process gas to the internal volume of the process chamber
Implementation Method 4
Epitaxy refers to the formation of a crystalline overlayer on a crystalline substrate. Epitaxial films may be grown from gaseous or liquid precursors using the crystalline substrate as a seed crystal
Data Source
AI summary
Embodiments relate to methods and apparatus for batch processing of substrates during epitaxial film formation. In one example, a process chamber includes a chamber lid and substrate support. The chamber lid includes a centrally disposed gas inlet and a first gas deflector coupled to the chamber lid and adapted to direct the first process gas laterally across surfaces of a plurality of substrates. The lid also includes one or more gas outlets disposed radially outward of the centrally disposed gas inlet, and a plurality of lamps disposed between the centrally disposed gas inlet and the one or more gas outlets. The substrate support is rotatable and includes both a gas passage formed therein for introducing a second process gas to the internal volume of the process chamber and a second gas deflector adapted to direct the second process gas laterally across the surfaces of the plurality of substrates.