From Chemically Reactive Gases TRIZ Cases

Interlocking teeth on the shaft and susceptor eliminate rotational wobble, ensuring uniform film deposition in chemical vapor deposition chambers.

Wafer retention pockets use compound arcs to create uniform gaps between the wafer edge and pocket interior during rotation.

A substrate holder with a recess region absorbs pressure from the reactor wall.

A semiconductor process chamber reflector uses segmented cooling channels to maintain uniform temperature distribution during high-temperature cleaning.

Processor analyzes pressure changes during carrier gas flow to quantify remaining solid precursor, preventing depletion-related misprocessing.

A modified susceptor uses rear surface orifices to extract out-diffused dopant atoms into a central passage.

An interference thin layer pattern reflects lamp light to ensure uniform distribution across the substrate.

A susceptor featuring a side face groove limits heat conduction to the substrate edge, preventing gas leaks and enhancing layer quality.

Flow-reversing elements combine parallel channels to provide interchannel flow, preventing CVD growth contamination in ALD reactors.

Multi-plane shower plate segments gas flow passages to reduce fluid resistance and improve film thickness uniformity in MOCVD reactors.

External upper plate reflects thermal radiation to maintain uniform substrate temperature, reducing heat stresses and shortening cooling times.

A film-forming apparatus uses a ceiling height between 0.15 and 6.05 cm to rectify mist flow parallel to the substrate.

Flat-bottomed susceptor pockets use underpressure to grip substrates, preventing thermal deformation during epitaxial deposition.

Segmented GaN substrates maintain minimum edge off-angles and monotonic surface changes, resolving precision trade-offs that limit usable device area.

A film-forming apparatus uses segmented resistive heaters to maintain high substrate temperatures for SiC epitaxial growth.

Maintain a higher pressure in the lower chamber region to prevent gas diffusion, ensuring uniform epitaxial film deposition and reduced contamination.

Varying curvature radii on the CVD upper window direct gas uniformly across the substrate, reducing epitaxial dips and enabling higher growth rates.

Offsetting gas outlet openings from cell corners eliminates central coverage gaps during rotation, ensuring uniform gas supply in CVD reactors.

A magnetically doped topological insulator quantum well film uses dual-element doping to tune carrier density.

Inert gas discharge shields heaters from hydrogen reactions, preventing carbon exposure and extending heater lifetime.

Segmented gas nozzles and inclined susceptor surfaces overcome slow batch switching to deliver high-throughput, uniform film deposition.

Black quartz pre-heat rings reduce thermal fatigue and power consumption by storing latent heat during phase transitions.

An inclined pre-heat ring directs purge gas flow toward the exhaust side within a semiconductor process chamber.

Movable second electrode component accommodates circumferential expansion of an annular heater element within a widened groove.

A textured substrate featuring a copper layer, nickel barrier, and thin nickel oxide layer for epitaxial film formation.

Heat treatment stabilizes susceptor electrical resistance and inductance properties.

A non-linear heating profile combined with nitrogen purging accelerates moisture removal in epitaxial reactors.

A multi-piece liner design with an air gap reduces heat transfer between the inner and outer portions of a processing chamber.

Polished metallic alloy components reflect thermal energy into semiconductor processing chambers, reducing energy loss and extending component lifespan.

A CVD susceptor uses material inserts positioned in base body recesses to enable a single coating step covering the entire component surface.

Introducing alkaline gas into the exhaust pipe of an epitaxial growth apparatus to react with raw materials and prevent oily silane formation.

A processing chamber uses a rotary substrate support with multiple pockets to hold and process several wafers simultaneously.

Segmented injector ports and independent mass flow controllers distribute gas to substrate regions, achieving uniform layer thickness.

Segmented heater spacing maintains temperature uniformity on rotating epitaxial substrates, resolving film thickness non-uniformity in micro LED manufacturing.

Interconnected pores in macrocell supports improve temperature uniformity and reduce thermal stress during epitaxial processing.

A vapor deposition method switches heater output control to temperature feedback control as film thickness increases.

Segmented outer housing reduces wall stress and eliminates reinforcing ribs, ensuring uniform temperature distribution for higher substrate yield.

Extending the pre-heat ring radially increases gas heating distance, resolving non-uniform substrate temperature caused by insufficient pre-heat length.

A chamber arrangement uses parallel mass flow controllers and a bypass backpressure controller to stabilize fluid dynamics.

Segmenting the gas inlet element prevents parasitic growth on cooled walls while enabling independent heating of the outlet plate for effective cleaning.

A CVD susceptor bearing surface uses segmented radial zones to direct carrier gas through discharge channels.

Rotating substrate support directs process gas laterally across multiple wafers to enable concurrent epitaxial film formation.

Recessed ledges on the barrel susceptor reduce boundary layer thickness to achieve less than one micrometer variation in epitaxial deposition.

A monolithic lamphead with coolant passages and reflector cavities regulates process chamber temperature.

A compact atomic layer deposition reactor uses a movable dual-lid assembly to deliver uniform thin film growth on heated substrates.

Recessed structures on a ceiling plate reduce friction resistance to reaction gas flow, minimizing deposit adhesion and peeling that contaminates wafers.

A macrocell support structure with interconnecting physical pores manages electromagnetic energy absorption and redistribution in processing chambers.

A mushroom-like susceptor device with a vertical rod and horizontal plate enables precise gas injector placement in chemical vapor deposition reactors.

Segmenting the reaction chamber with expansion volumes creates a unidirectional flow that prevents backflow and turbulence during atomic layer deposition.

Segmented induction heating base uses embedded fluid channels to equalize substrate temperatures across multiple reaction chambers.