Heating Apparatus Heater Spacing for CVD Temperature Uniformity
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Solution Overview
Problem
Traditional CVD devices fail to maintain temperature uniformity on larger epitaxial substrates during film formation, leading to non-uniform film thickness and emission in micro light-emitting diode elements.
Innovation Solution
A heating apparatus with a rotating stage, multiple wafer carriers, and heaters arranged in specific configurations to ensure temperature uniformity, where the spacing and width of heaters are optimized to maintain different temperatures across the substrate, enhancing film uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional CVD device heating method is used, then device structure is simple, but temperature uniformity on epitaxial substrate deteriorates
Solution Approach 1:
The heating apparatus is divided into multiple independent heating zones with separate heaters (first heaters in first heating region, second heaters in second heating region, third heaters in third heating region). Each heating zone can be independently controlled to achieve precise temperature distribution across the large epitaxial substrate, resolving the contradiction between temperature uniformity and device complexity by organizing complexity into manageable segments.
Solution Approach 2:
Different heating regions are designed with different heater configurations (different spacings, widths, and temperatures) to match the specific heating requirements of different substrate areas. The first heating region uses a specific heater arrangement while the second heating region uses a different arrangement, allowing local optimization of temperature uniformity across the substrate surface.
2Productivity
If epitaxial substrate size increases, then productivity improves, but temperature uniformity deteriorates
Solution Approach 1:
The large epitaxial substrate is divided into multiple heating regions (first, second, and third heating regions) with distinct heater arrangements. This segmentation allows each region to be optimized for uniform heating while collectively covering the entire large substrate area, enabling processing of larger substrates without sacrificing temperature uniformity.
Solution Approach 2:
The heating system extends in multiple spatial dimensions with heaters positioned at different radial distances from the rotating axis and at different axial positions. This multi-dimensional heater distribution allows comprehensive coverage of large substrate areas while maintaining temperature uniformity across the entire surface.
3Temperature
If heater spacing is reduced to improve temperature uniformity, then temperature homogeneity improves, but energy consumption increases
Solution Approach 1:
Different heating regions use different heater spacings optimized for their specific requirements. Regions requiring higher temperature uniformity use closer heater spacing, while regions with less stringent requirements use wider spacing, reducing overall energy consumption while maintaining necessary temperature homogeneity in critical areas.
Solution Approach 2:
The rotating stage dynamically moves the substrate through different heating regions during processing. This dynamic motion allows the substrate to receive heat from multiple heater positions over time, achieving temperature uniformity without requiring all heaters to operate at maximum power simultaneously, thus reducing energy consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves temperature uniformity on epitaxial substrates, resulting in better film thickness uniformity and enhanced light emission uniformity of micro light-emitting diode chips.
Implementation Method 1
a plurality of first heaters (131a, 131b, 131c) disposed under a first heating region (HR1), a second heater (132a) disposed under a second heating region (HR2)... the first heaters (131a, 131b, 131c) include a first temperature, the second heater (132a) includes a second temperature
Data Source
AI summary
A heating apparatus including a rotating stage, a plurality of wafer carriers, a plurality of first heaters, and at least one second heater is provided. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate around a rotating axis of the rotating stage. The plurality of first heaters is disposed under a first heating region, each have a first width Wa. There is a first spacing Sa between any two adjacent first heaters. The at least one second heater is disposed under a second heating region, and has a second width Wb. There is a smallest spacing Sab between the at least one second heater and the first heating region, and Wa, Wb, Sa and Sab satisfy the equation: Wa/(Wa+Sa) ≥ Wb/(Wb+Sab). Each wafer carrier overlaps the first heating region in the axial direction of the rotating axis.