Multi-pocket Substrate Support for Parallel Epitaxy
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Solution Overview
Problem
The epitaxy process in semiconductor manufacturing is slow and typically performed on a single substrate at a time, limiting throughput in advanced manufacturing facilities.
Innovation Solution
A processing chamber design that allows for simultaneous processing of multiple substrates using a gas distributor, rotary actuator, and energy source, with substrate pockets and a reflector plate to enhance gas flow and energy distribution, enabling efficient processing of multiple substrates in parallel.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If epitaxy process is performed on a single substrate in a chamber, then processing quality is maintained, but throughput is limited and processing time is long
Solution Approach 1:
The substrate support is divided into multiple pockets (e.g., 4 pockets) that can independently hold separate substrates. Each pocket can be individually positioned and processed, allowing parallel processing of multiple substrates while maintaining the quality standards of single-substrate processing through controlled gas flow and energy distribution to each pocket.
Solution Approach 2:
The invention transitions from processing substrates sequentially in a single dimension to processing multiple substrates simultaneously by utilizing the radial dimension around the central exhaust opening. Substrates are arranged circumferentially in pockets distributed around the central exhaust opening, enabling parallel processing across multiple spatial positions within the same chamber volume.
2Productivity
If multiple substrates are processed simultaneously, then throughput increases, but gas flow distribution and energy uniformity become challenging
Solution Approach 1:
The gas distributor is designed with multiple gas distribution holes positioned to deliver gas specifically to each pocket region. The energy source (lamps) are arranged to provide localized energy delivery to each substrate position. This local quality approach ensures that each substrate receives appropriate gas flow and energy distribution tailored to its specific position, maintaining process uniformity across all substrates processed in parallel.
Solution Approach 2:
The central exhaust opening with channel provides a common exhaust path that creates a pressure gradient and gas flow pattern ensuring uniform distribution across all pockets. The rotary actuator enables precise positioning of each pocket to optimize gas flow exposure and energy receipt, with the ability to adjust positions based on processing requirements to maintain uniformity across multiple substrates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly increases the throughput of the epitaxy process by allowing multiple substrates to be processed simultaneously, reducing processing time and enhancing efficiency in semiconductor manufacturing.
Implementation Method 1
an energy source coupled to the bottom, the energy source comprising a housing containing a plurality of lamps
Implementation Method 2
a gas distributor disposed around the sidewall
Implementation Method 3
a rotary actuator disposed along a longitudinal axis thereof
Implementation Method 4
a reflector plate disposed on the top facing the substrate support
Data Source
AI summary
Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define a volume, a gas distributor disposed around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central exhaust opening having a channel and a rotary actuator disposed along a longitudinal axis thereof, and a plurality of substrate pockets distributed around the central exhaust opening, and an energy source coupled to the bottom.