Independent ESD Protection Circuits for Semiconductor Failure Tracing

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Solution Overview

Problem

Current semiconductor devices face challenges in accurately detecting and tracing electrostatic discharge (ESD) failures, which can render them defective during the manufacturing process, making it difficult to identify the exact cause and occurrence process of defects.

Innovation Solution

A semiconductor device with independently formed ESD protection circuits, each having multiple junctions of different sizes and capacities, is used for testing at various fabrication stages, allowing for efficient detection and tracing of ESD failures through multiple test operations, including wafer level, package level, and post-package level tests.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a single ESD protection circuit is used in conventional semiconductor devices, then the device structure remains simple, but the ability to accurately detect and trace ESD failures at different manufacturing stages is insufficient

Engineering Contradiction:
ImproveESD failure detection accuracyVSAvoidESD protection circuit structure
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The ESD protection circuit is divided into multiple independent ESD protection circuits (first ESD protection circuit, second ESD protection circuit, etc.), each responsible for protecting at different manufacturing stages. This segmentation allows accurate tracing of ESD failures to specific stages while maintaining clear functional separation, resolving the contradiction between detection accuracy and structural complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Independent ESD protection circuits are introduced as intermediary elements between the functional circuit and external environments at different manufacturing stages. Each ESD protection circuit acts as a dedicated mediator that can be independently tested and traced, enabling precise failure detection without complicating the core functional circuit structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If multiple ESD protection circuits with different junction sizes and capacities are formed independently, then ESD failure tracing at various fabrication stages becomes possible, but the manufacturing process complexity increases

Engineering Contradiction:
ImproveESD failure tracing capabilityVSAvoidManufacturing process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

Each ESD protection circuit is designed with specific local characteristics - different junction sizes and capacities tailored to the requirements of particular manufacturing stages. This local quality optimization allows each circuit to be specifically tuned for its stage while maintaining overall manufacturing feasibility through standardized design patterns.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

Multiple ESD protection circuits are built into the device structure in advance during fabrication, with each circuit prepared for testing at specific manufacturing stages. This preliminary action enables systematic ESD failure tracing without requiring additional complex manufacturing steps later, as the testing infrastructure is already in place.

Inventive Principle:
Principle #10Preliminary action

3Object-generated harmful factors

If conventional ESD protection methods are used, then the functional circuit is protected from ESD damage, but the exact cause and occurrence process of defects cannot be identified

Engineering Contradiction:
ImproveESD damage protectionVSAvoidDefect occurrence information
Core Design Contradiction:
Object-generated harmful factorsVSLoss of information

Solution Approach 1:

Each independent ESD protection circuit provides feedback information about ESD events at its specific manufacturing stage. By testing each ESD protection circuit separately at different stages, the system generates feedback that traces the occurrence process of defects, enabling identification of exactly when and how ESD damage occurred while maintaining protection functionality.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS11133232B2Semiconductor device, method of testing semiconductor device and method of manufacturing semiconductor device
Publication Date: 2021.09.28 SAMSUNG ELECTRONICS CO LTD
  • US11133232B2 patent drawing
  • US11133232B2 patent drawing
  • US11133232B2 patent drawing

AI summary

A semiconductor device is provided. The semiconductor device includes a functional circuit; a plurality of electrostatic discharge (ESD) protection circuits formed independently of the functional circuit, wherein each of the plurality of ESD protection circuits includes a plurality of junctions having different sizes and capacities, each of the plurality of ESD protection circuits is configured to perform an ESD test in different processes of fabrication of the semiconductor device; and a plurality of test pads connected to the plurality of ESD protection circuits and the functional circuit, respectively, wherein each of the plurality of test pads is configured to receive a test signal for the ESD test.