Etch Stop Layer for Buffer Layer Uniformity in Image Sensors

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Solution Overview

Problem

Existing image sensor device structures face issues with surface roughness and uniformity of the buffer layer due to the lack of an etch stop layer, leading to performance degradation and non-uniform thickness, which affects the overall image sensing capability.

Innovation Solution

Incorporating an etch stop layer, such as aluminum oxide or zirconium oxide, between the buffer layer and the metal grid structures to protect underlying layers from etching, ensuring surface smoothness and uniform thickness, and using metal grid structures with reflective properties to guide light effectively.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If no etch stop layer is used, then the device structure is simpler, but the buffer layer exhibits surface roughness and non-uniform thickness

Engineering Contradiction:
Improvebuffer layer uniformityVSAvoidlayer structure
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

An etch stop layer comprising aluminum oxide and zirconium oxide is introduced between the buffer layer and the metal grid structure. This intermediary layer prevents etching of the buffer layer by the metal etchant, thereby maintaining buffer layer uniformity and surface smoothness while enabling the formation of the metal grid structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If the buffer layer is directly exposed to metal etching processes, then the manufacturing process is shorter, but the buffer layer thickness becomes non-uniform

Engineering Contradiction:
Improvebuffer layer thickness controlVSAvoidmanufacturing process length
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The etch stop layer is formed on the buffer layer before the metal grid structure is deposited. This preliminary protective action ensures that when subsequent metal etching processes are performed, the buffer layer thickness remains uniform and controlled, as the etch stop layer prevents any etching of the buffer layer.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the buffer layer surface is rough, then additional protective layers are needed, but the overall device performance degrades

Engineering Contradiction:
Improvedevice performanceVSAvoidsurface roughness
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The etch stop layer serves as a protective intermediary that prevents etching-induced surface roughness on the buffer layer. By blocking the etchant from contacting the buffer layer, the etch stop layer maintains a smooth buffer layer surface, thereby preserving device performance without requiring additional corrective layers.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The etch stop layer improves surface roughness and uniformity of the buffer layer, enhancing the performance of the image sensor device by maintaining controlled thickness and improving light guidance, resulting in better image sensing capabilities.

Implementation Method 1

an etch stop layer, such as aluminum oxide or zirconium oxide, between the buffer layer and the metal grid structures to protect underlying layers from etching

Methodology Applied
Scientific EffectChemical resistance:

Implementation Method 2

using metal grid structures with reflective properties to guide light effectively

Methodology Applied
Scientific EffectLight reflection: Reflection

Data Source

PatentUS9991303B2Image sensor device structure
Publication Date: 2018.06.05 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9991303B2 patent drawing
  • US9991303B2 patent drawing
  • US9991303B2 patent drawing

AI summary

An image sensor structure is provided. The image sensor device structure includes a substrate, and the substrate includes an array region and a peripheral region. The image sensor device structure includes an anti-reflection layer formed on the substrate and a buffer layer formed on the anti-reflection layer. The image sensor device structure includes a first etch stop layer formed on the buffer layer and a metal grid structure formed on the first etch stop layer. The image sensor device structure also includes a dielectric layer formed on the metal grid structure.