Atomic Layer Etching Ion Energy Distribution Control
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Solution Overview
Problem
Current atomic layer etching methods face challenges in accurately controlling etching depth and minimizing damage on wafers, particularly in semiconductor manufacturing, where precise control is crucial for miniaturization.
Innovation Solution
An etching method and apparatus that calculate and adjust the ion energy distribution mathematical function during processing, using input parameters like electric power, pressure, and gas flow rate, to optimize etching conditions and prevent damage by extracting the maximum energy value of the ion energy distribution mathematical function.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If atomic layer etching is performed using conventional methods, then etching can be performed on semiconductor wafers, but the etching depth and damage to the wafer cannot be controlled with high accuracy
Solution Approach 1:
The patent applies feedback by calculating the ion energy distribution mathematical function using measured values during etching processing, then using this calculated information to adjust etching conditions. This closed-loop feedback mechanism enables real-time monitoring and adjustment of ion energy parameters, achieving high-precision control of etching depth while minimizing wafer damage through dynamic optimization of processing conditions.
Solution Approach 2:
The patent utilizes parameter changes by systematically varying electric power, pressure, and gas flow rate parameters during etching processing. By calculating the ion energy distribution mathematical function based on these parameter variations and measured values, the system optimizes the combination of parameters to achieve precise etching depth control while reducing harmful ion penetration and wafer damage.
2Productivity
If ion energy is increased to improve etching efficiency, then etching speed increases, but wafer damage increases due to excessive ion penetration
Solution Approach 1:
The patent optimizes the relationship between ion energy and etching speed by calculating the ion energy distribution mathematical function and adjusting processing parameters (electric power, pressure, gas flow rate). This enables identification of the optimal ion energy range that achieves high etching speed while preventing excessive ion penetration and associated wafer damage.
Solution Approach 2:
The system uses feedback from measured values during etching to calculate the ion energy distribution mathematical function, then adjusts processing conditions based on this calculated information. This real-time feedback mechanism allows dynamic optimization of ion energy levels to maintain high productivity while minimizing harmful ion penetration effects.
3Measurement precision
If conventional etching methods are used, then processing can be performed, but real-time monitoring and adjustment of etching conditions are not possible
Solution Approach 1:
The patent implements real-time monitoring by calculating the ion energy distribution mathematical function using measured values acquired during etching processing. This feedback mechanism provides accurate real-time information about processing conditions, enabling precise monitoring and adjustment without requiring overly complex additional hardware systems.
Solution Approach 2:
The patent replaces complex mechanical measurement and adjustment systems with a computational approach. By calculating the ion energy distribution mathematical function from measured values and using this calculated information to control etching conditions, the system achieves precise monitoring with reduced mechanical complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of etching depth and damage on wafers, enabling accurate atomic-level etching without removing the base layer, and allows real-time monitoring of the etching process.
Implementation Method 1
calculating an ion energy distribution mathematical function, by using a measured value upon the etching processing
Implementation Method 2
a single layer of Si of the wafer surface is removed in a form of a reaction product (SiCl)
Implementation Method 3
the surface is applied with argon (Ar) ions
Data Source
AI summary
An etching method includes inputting, to a setting unit, at least electric power, a pressure, and a gas flow rate, performing etching processing in a chamber, on the basis of a value inputted to the setting unit, and calculating an ion energy distribution mathematical function, by using a measured value upon the etching processing.