Electric Discharge Tubes TRIZ Cases

Sequential power impulses overlap between partial cathodes to maintain continuous generator draw.

Universal electrode configurations treat diverse container geometries without complex mechanical adaptations.

Removes selected elementary shapes from fractured patterns to reduce the number of shots required for direct writing lithography.

A focused ion beam apparatus moves micro samples using a detachable carrier engagement part linked to a multi-axis sample tray.

Capacitive coupling with dielectric barriers and curved electrodes enables low power operation while reducing ion bombardment damage.

Segmented gas feeds deliver reactant and tuning gases separately to control plasma dissociation patterns, resolving wafer etch non-uniformity.

A nested ring assembly allows the inner component to flip, exposing a fresh surface for continued processing.

Fits diffractogram line profiles to a function to extract defocus and astigmatism parameters for electron microscopy.

A pattern correction apparatus calculates individual adjustment values for continuous micro sides using virtual side approximations.

A cross-section processing method sets adjacent sliced regions with defined length differences to measure actual slice widths using ion and electron beams.

Multi-beam writing apparatus calculates offset dose to compensate for defective beams using a common blanking mechanism.

Amplitude modulation circuit synchronizes high frequency signal with low frequency phase to control plasma density profile.

Separating TEOS and helium supply lines prevents micro-bubble formation, resolving the trade-off between valve complexity and deposition uniformity.

Real-time RF data monitoring detects grounding strap breakage without stopping plasma processing, preventing substrate defects from weakened straps.

A scanning electron microscope autofocus method generates thinned images by shifting the electron beam position to determine optimum focal points.

An external electrode on a dielectric chamber prevents overheating and erosion during plasma cleaning.

A plasma chamber temperature controller uses a three-way valve to adjust coolant flow for precise thermal management.

A boron-mediated plasma process removes persistent aluminum fluoride residues while an amorphous silicon capping layer prevents re-sublimation contamination.

Applying distinct RF frequencies equalizes plasma density and ion energy distribution, resolving non-uniform etching defects in high aspect ratio patterns.

A resistive ceramic shielding member confines electric fields to reduce arcing power and protect specimens from electrical damage.

A liquid electrode tip uses a submerged conductor and solution reservoir to establish stable electrical grounding for plasma discharge.

A swinging application device deposits substance across adjacent trays to ensure uniform coating on semiconductor processing objects.

A sample introduction device uses a support member and controller to move holders into vacuum chambers with precision.

A double-tilt in-situ mechanical sample holder uses a piezoelectric ceramic drive system to enable precise atomic-scale observation.

Helium carrier gas enables smooth polymer deposition during atomic layer etching, resolving the trade-off between etch selectivity and front roughness.

A magnet assembly with a moveable control body adjusts the magnetic field locally to maintain film uniformity.

A discharge vessel protrusion shifts the inner wall away from plasma focus, reducing quartz glass damage and extending replacement cycles.

Composite substrates with tailored coefficients reduce thermal mismatch stress, maintaining zero stress on oxide layers across wide temperature ranges.

Dynamic electromagnet positioning adjusts beam steering angles to ensure uniform dose distribution and minimize wasted ionizing energy.

Calculates ion energy distribution functions to adjust etching parameters, controlling depth and minimizing wafer damage.

Biased plasma amorphizes crystalline silicon, enabling directional remote etching with high selectivity over isotropic removal.

Configurable compound lens controls backscattered electron distribution via coil excitation ratios.

Raising the electrostatic chuck temperature immediately after etching prevents carbon-fluorine deposit formation on target objects.

A focused ion beam apparatus displays virtual positional relationships between the sample table and irradiation axis to enable precise beam control.

Transmission current imaging detects bottom-of-hole defects in polysilicon layers, eliminating delayed inspection requirements.

Laser-controlled electron emission eliminates mechanical vibrations from beam blanking to achieve sub-10 ps pulsing and nanometer-scale resolution.

Rotary plasma reactors tumble particles to expose hidden layers, resolving static system inefficiencies in mass production.

A magnetic material sputtering target with controlled oxide grain size disperses non-magnetic particles in a metal phase.

Multi-zone PECVD electrostatic chuck segments temperature and bias control to resolve film thickness non-uniformity from thermal gradients.

Segmented latch arms prevent inadvertent disconnection under external forces while maintaining secure connection reliability.

A polygonal glass plasma chamber body enables linear electrode arrangement to achieve homogeneous plasma field line distribution.

Leak current discharge circuit connected to a conductor in the cooling medium prevents high voltage leakage from the excimer lamp electrode.

Introducing oxygen into helium distribution channels captures free electrons, preventing arcing while maintaining thermal conductivity for wafer processing.

Automated profile analysis determines waist height and astigmatism, replacing manual assessment with precise equipment configuration.

Segregating voltage application and discharge spaces prevents metal evaporation from contaminating the generated active gas.

An electrical connector assembly uses stacked contacts to secure mounting on a printed circuit board.

A ceramic gas nozzle controls surface profile elements to suppress particle fallout during plasma processing.

Coaxial coil groups surround the power feeding unit to filter high frequency noise from heater circuits.

Ion beam treatment modifies infrared reflecting layers to reduce sheet resistance and change stress state.

Segmented dielectric member reflects and attenuates surface waves, preventing abnormal discharges from high-frequency electromagnetic fields.