Probe Assembly High Bandwidth Beam Electron Emission Control
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Solution Overview
Problem
Current semiconductor device testing methods, such as atomic force probes and electron beam probe assemblies, face challenges in accurately generating high frequency waveforms due to intrusive methods, insufficient resolution for advanced process nodes, and mechanical vibrations from electron beam alignment, which affect accuracy and bandwidth.
Innovation Solution
An electron beam probe assembly that pulses the primary electron beam without blanking, using a laser to control electron emission, allowing for sub-10 ps pulsing and increased bandwidth, and aligns the beam without mechanical movement by controlling the deflector coils, thereby enhancing resolution and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If blanking is used to pulse the electron beam, then the electron beam can be controlled to strike the aperture, but mechanical vibrations and alignment issues reduce measurement precision and bandwidth
Solution Approach 1:
The patent extracts and removes the blanking mechanism from the electron beam probe assembly. Instead of using blanking to control the electron beam, the invention uses direct electron emission control through field emission tip modulation, eliminating the source of mechanical vibrations and alignment issues while maintaining beam control capability
Solution Approach 2:
The patent replaces the mechanical blanking system with an electrical field control mechanism. By using voltage modulation on the field emission tip, the electron beam is controlled through electrical means rather than mechanical deflection and blocking, thereby eliminating mechanical vibrations that degraded measurement precision
2Manufacturing precision
If optical probing is used to generate high frequency waveforms, then non-intrusive testing is achieved, but resolution is insufficient for 5 nm and beyond process nodes
Solution Approach 1:
The patent changes the fundamental parameter of the probing mechanism from optical wavelengths to electron beam wavelengths. Electron beams have much shorter effective wavelengths than optical methods, enabling resolution at 5 nm and below process nodes while avoiding the harmful effects of silicon absorption and charge carrier generation that plague UV and visible light probing
3Ease of operation
If contact probes are used to test semiconductor devices, then direct electrical contact is achieved, but intrusive methods prevent probing during active testing
Solution Approach 1:
The patent introduces an electron beam as an intermediary between the probe assembly and the semiconductor device. The electron beam can penetrate through packaging materials and bond wires to reach internal device structures without making physical contact, enabling non-intrusive probing of active devices during operational testing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves higher resolution and bandwidth, allowing for precise testing of semiconductor devices with improved sampling rates and reduced mechanical vibrations, enabling accurate waveform generation and imaging at nanometer scales.
Implementation Method 1
an electron source for emitting primary electrons when a voltage exceeds a threshold
Implementation Method 2
a photon source positioned to emit photons that strike the electron source such that when the photons strike the electron source, the electron source emits the primary electrons
Implementation Method 3
detection circuitry configured to detect secondary electrons emitted from a test device of a test assembly and to form an excitation waveform
Data Source
AI summary
A probe assembly for analyzing a test device that includes a housing with an electron source disposed therein for emitting primary electrons. A photon source is positioned to emit photons that strike the electron source such that when the photons strike the electron source, the electron source emits the primary electrons. Detection circuitry is provided that is configured to detect secondary electrons emitted from a test device of a test assembly and to form an excitation waveform.