Photoresist with multiple patterning radiation-absorbing elements and/or vertical composition gradient
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current EUV photoresists face challenges such as low absorption coefficient, pattern collapse, and diffusion of photo-activated species, leading to poor lithographic performance and pattern fidelity issues in advanced semiconductor fabrication.
Innovation Solution
Development of EUV photoresist materials using organo-metallic precursors with high EUV-absorption cross-section and a vertical composition gradient, achieved through gas-phase deposition methods like CVD and ALD, allowing for tuning of film composition during deposition to create a gradient with higher EUV-absorbing elements at the bottom and lower at the top.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional EUV photoresist materials are used, then the lithographic process can proceed, but the absorption coefficient is low leading to poor pattern fidelity
Solution Approach 1:
The patent changes the chemical composition parameters of the photoresist by incorporating metals with high EUV absorption cross-sections (such as Sn, Sb, In, Bi, Te) into the resist formulation. This parameter change directly increases the EUV absorption coefficient while maintaining pattern fidelity, resolving the contradiction between low absorption and poor pattern quality.
Solution Approach 2:
The patent creates composite photoresist materials by combining organic resist components with inorganic metal atoms that have high EUV absorption cross-sections. These composite materials exhibit both the desirable patterning properties of organic resists and the high EUV absorption properties of metal-containing compounds, thereby improving pattern fidelity without sacrificing absorption efficiency.
2Use of energy by moving object
If photoresist materials with high EUV absorption are used, then EUV photon absorption improves, but pattern collapse occurs
Solution Approach 1:
The patent applies local quality by creating a vertical composition gradient within the photoresist film, where the concentration of high-EUV-absorption metal atoms varies with depth. This gradient structure ensures that each region of the resist has optimized properties: higher metal content near the substrate for strong absorption, and lower metal content toward the surface to maintain structural integrity and prevent pattern collapse.
Solution Approach 2:
The patent modifies the spatial distribution parameter of metal atoms within the photoresist by implementing a vertical gradient. This parameter change allows the resist to achieve high overall EUV absorption while maintaining local structural strength, particularly at the patterned features, thereby preventing pattern collapse.
3Ease of manufacture
If uniform composition photoresist is used, then deposition is simple, but diffusion of photo-activated species occurs leading to poor lithographic performance
Solution Approach 1:
The patent implements local quality through a vertical composition gradient where the metal atom concentration varies with depth in the photoresist film. This gradient structure suppresses diffusion of photo-activated species by creating compositional barriers at different depths, thereby improving lithographic performance while maintaining a relatively simple vapor-phase deposition process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances EUV photon absorption and etch selectivity, improving pattern fidelity and resolution in semiconductor processing by efficiently utilizing EUV photons and generating secondary electrons for uniform exposure across the film depth.
Implementation Method 1
M1 is a metal having a high patterning radiation-absorption cross-section
Implementation Method 2
providing a first reactant and a second reactant to the reaction chamber and initiating a reaction between the first reactant and the second reactant to thereby deposit the photoresist material on the substrate, where the first reactant and the second reactant are each provided to the reaction chamber in vapor phase
Data Source
AI summary
Various embodiments herein relate to techniques for depositing photoresist material on a substrate. For example, the tin techniques may involve providing the substrate in a reaction chamber; providing a first and second reactant to the reaction chamber, where the first reactant is an organo-metallic precursor having a formula of M1aR1bL1c, where: M1 is a metal having a high patterning radiation-absorption cross-section, R1 is an organic group that survives the reaction between the first reactant and the second reactant and is cleavable from M1 under exposure to patterning radiation, L1 is a ligand, ion, or other moiety that reacts with the second reactant, a≥1, b≥1, and c≥1, and where at least one of the following conditions is satisfied: the photoresist material comprises two or more high-patterning radiation absorbing elements, and/or the photoresist material comprises a composition gradient along a thickness of the photoresist material.