EUV Photolithography Plasma Control and Particle Deflection

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Solution Overview

Problem

Extreme ultraviolet photolithography systems face challenges in fine-tuning plasma generation parameters to produce sufficient extreme ultraviolet radiation efficiently and in protecting sensitive components from charged particle damage, which can lead to costly repairs or scrapping of semiconductor wafers and masks.

Innovation Solution

The system dynamically adjusts plasma generation properties using sensors and machine learning processes to optimize parameters such as droplet speed, size, and laser pulse timing, and employs a charged particle deflection system with magnetic fields to deflect damaging particles away from sensitive components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If droplets are irradiated with a laser beam to generate extreme ultraviolet light, then extreme ultraviolet radiation is produced, but charged particles are generated that can damage sensitive components

Engineering Contradiction:

Improveextreme ultraviolet light generation efficiencyVSAvoidcharged particle damage to components

Core Design Contradiction:

Use of energy by moving objectVSObject-affected harmful factors

Solution Approach 1:

The patent extracts and removes charged particles from the system using electrostatic deflectors and charged particle traps positioned between the plasma generation region and the scanner. This separates the harmful charged particles from the useful extreme ultraviolet light path, allowing the light to reach the scanner while preventing particle damage to sensitive components.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces electrostatic deflectors and charged particle traps as intermediary components that selectively interact with charged particles without significantly affecting the extreme ultraviolet light transmission. These intermediaries deflect or capture charged particles while allowing the photolithography process to continue uninterrupted.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Productivity

If plasma generation parameters are adjusted to increase extreme ultraviolet radiation output, then light generation efficiency improves, but control precision becomes more difficult

Engineering Contradiction:

Improveextreme ultraviolet radiation outputVSAvoidparameter control complexity

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The patent implements feedback control by monitoring plasma generation parameters and adjusting droplet ejection timing, laser pulse timing, and laser power dynamically. This closed-loop control system automatically optimizes plasma generation conditions to maximize extreme ultraviolet radiation output while maintaining stable and precise parameter control, reducing the complexity of manual parameter adjustment.

Inventive Principle:

Principle #23Feedback

3Ease of operation

If traditional photolithography light sources are used, then the system is simpler to operate, but feature size is limited by the wavelength of light

Engineering Contradiction:

Improvesystem operation simplicityVSAvoidfeature size

Core Design Contradiction:

Ease of operationVSManufacturing precision

Solution Approach 1:

The patent fundamentally changes the light source parameter from conventional lasers to laser-produced plasma, which emits extreme ultraviolet radiation with much shorter wavelengths. This parameter change enables the fabrication of smaller features while the automated plasma generation system maintains ease of operation through programmatic control of droplet and laser parameters.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the efficiency of extreme ultraviolet light generation and reduces damage to expensive photolithography components, improving the overall performance and reducing costs associated with component repair or replacement.

Implementation Method 1

extreme ultraviolet light is typically produced by irradiating droplets of selected materials with a laser beam. The energy from the laser beam causes the droplets to enter a plasma state. In the plasma state, the droplets emit extreme ultraviolet light.

Methodology Applied

Scientific EffectLaser-induced plasma generation: Plasma

Implementation Method 2

The extreme ultraviolet light travels toward a collector with an elliptical or parabolic surface. The collector reflects the extreme ultraviolet light to a scanner.

Methodology Applied

Scientific EffectLight reflection: Reflection

Implementation Method 3

Methodology Applied

Scientific EffectMagnetic field deflection: Magnetic Field

Data Source

PatentUS20240377752A1System and method for monitoring and controlling extreme ultraviolet photolithography processes

Publication Date: 2024.11.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.