Chemically Amplified Resist Material for Low-Power EUV Lithography
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Solution Overview
Problem
Current EUV lithography and other pattern formation technologies face challenges due to low power light sources, requiring high sensitivity resist materials and longer exposure times, which hinder practical application.
Innovation Solution
A chemically amplified resist material and method involving a two-step exposure process using ionizing and nonionizing radiation with specific wavelength ranges to generate acids and sensitizers, allowing for high sensitivity and fine pattern formation even with low-power light sources.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional EUV light sources are used, then lithography can be performed, but the power is low requiring long exposure times
Solution Approach 1:
The patent introduces a radiation-sensitive sensitizer as an intermediary substance that absorbs the low-power EUV radiation and transfers the energy to generate acid, which then catalyzes the resist material's pattern formation. This mediator enables efficient energy utilization from low-power sources, resolving the contradiction between low light source power and required exposure speed.
Solution Approach 2:
The patent changes the chemical parameters of the resist material by incorporating specific sensitizer compounds and acid-generating agents, transforming the material's response characteristics. This allows the resist to become highly sensitive to low-power EUV radiation, achieving fast exposure times despite the limited power of the light source.
2Reliability
If conventional resist materials are used, then the process is simple, but the sensitivity is inadequate for low-power light sources
Solution Approach 1:
The patent creates a composite resist material system combining multiple functional components: the base resist material, radiation-sensitive sensitizer compounds, and acid-generating agents. This composite formulation achieves high sensitivity to low-power EUV radiation while maintaining manageable process complexity through systematic integration of complementary functions.
Solution Approach 2:
The sensitizer component serves multiple functions simultaneously: it absorbs EUV radiation, generates acid catalysts, and initiates the pattern formation process. This multi-functionality increases reliability and sensitivity without proportionally increasing process complexity, as one additive component accomplishes several critical tasks.
3Manufacturing precision
If single-step exposure is used, then the process is simple, but pattern formation precision is insufficient
Solution Approach 1:
The patent divides the exposure process into two distinct sequential steps: a first exposure step that generates the sensitizer and acid, and a second exposure step that completes the pattern formation. This segmentation allows each step to be optimized independently, achieving superior pattern formation precision while keeping the overall process manageable through clear functional separation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high sensitivity and superior lithographic characteristics, enabling fine pattern formation with low-power light sources by generating radiation-sensitive components that differentiate exposed and unexposed regions effectively.
Implementation Method 1
a radiation-sensitive sensitizer absorbing a second radioactive ray that is nonionizing radiation having a wavelength greater than a wavelength of the first radioactive ray and greater than 200 nm
Implementation Method 2
The radiation-sensitive acid-and-sensitizer generating agent generates, upon the exposure to the first radioactive ray, an acid
Implementation Method 3
a base component that is capable of being made soluble or insoluble in the developer solution by an action of an acid
Data Source
AI summary
A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10−28 m3.