Metal-Containing Resist Topcoat for EUV Pattern Roughness Control

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Solution Overview

Problem

Photolithographic processes in semiconductor manufacturing face issues such as pattern distribution deterioration due to EUV irradiation, leading to roughness and non-uniformity in photoresist patterns, which affect the quality of ultrafine patterns.

Innovation Solution

A resist topcoat composition comprising a polymer with specific structural units and a solvent, including metal elements like Sb, Sn, and Te, which enhances EUV absorption and reduces pattern roughness and non-uniformity by minimizing photo shot noise.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If EUV light is irradiated to the photoresist, then sensitivity is improved, but pattern distribution deterioration occurs (roughness and IPU degradation)

Engineering Contradiction:

ImprovesensitivityVSAvoidpattern distribution

Core Design Contradiction:

Use of energy by moving objectVSManufacturing precision

Solution Approach 1:

The patent converts the harmful photo shot noise effect of EUV light into a beneficial signal by using metal elements (Sb, Sn, Te) with high EUV absorption coefficients. These metals absorb the random EUV photons that would otherwise cause damage, converting the harmful random irradiation into useful chemical signals that improve pattern formation while maintaining sensitivity.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent employs composite materials by incorporating metal elements (Sb, Sn, Te) into the photoresist composition. This creates a composite photoresist system that combines the base polymer matrix with metal compounds having high EUV absorption coefficients, enabling simultaneous improvement of sensitivity and pattern distribution uniformity under EUV irradiation.

Inventive Principle:

Principle #40Composite materials

2Power

If high energy EUV photons are used, then sensitivity is enhanced, but photo shot noise increases causing pattern roughness

Engineering Contradiction:

Improvephoton energyVSAvoidphoto shot noise

Core Design Contradiction:

PowerVSObject-generated harmful factors

Solution Approach 1:

The patent converts the harmful photo shot noise effect of high-energy EUV photons into a beneficial signal by using metal elements (Sb, Sn, Te) with high EUV absorption coefficients. These metals absorb the random EUV photons that would otherwise cause damage, converting the harmful random irradiation into useful chemical signals that improve pattern formation while maintaining sensitivity.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

3Ease of manufacture

If conventional photoresist composition is used, then manufacturing process is simple, but pattern distribution uniformity is poor

Engineering Contradiction:

Improveprocess simplicityVSAvoidpattern uniformity

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition improves sensitivity and reduces line edge roughness, line width roughness, and in-point uniformity of photoresist patterns, enabling the formation of fine and uniform patterns.

Implementation Method 1

improves sensitivity due to the presence of Sb, Sn, and/or Te, which have high EUV absorption efficiency

Methodology Applied

Scientific EffectEUV absorption: Absorption (EM radiation)

Data Source

PatentUS20260003286A1Resist topcoat composition and method of forming patterns using the composition

Publication Date: 2026.01.01 SAMSUNG SDI CO LTD

AI summary

Provided are a resist topcoat composition and a method of forming patterns using the resist topcoat composition, the resist topcoat composition including a polymer including a first structural unit and a second structural unit; and a solvent, wherein the first structural unit is represented by Chemical Formula M-1, and the second structural unit includes a metal element and is derived from a compound having an unsaturated double bond. Details of the Chemical Formulas are as described in the specification.