A curved bowl exhaust guide redirects rotating gas into the duct to reduce backflow and contamination during high-speed substrate treatment.
Metal-containing resist topcoats absorb EUV more efficiently to cut shot-noise-driven roughness and improve fine pattern uniformity.
A tuned polyimide molecular weight and crosslinkable resin system minimizes curing shrinkage while improving flatness and chemical resistance in RDL films.
Halide-based dry development for metal EUV resists improves etch resistance, limits line collapse, and preserves critical dimensions.
Halide dry development of metal-containing EUV resist improves critical dimension control, scum removal, etch resistance, and line collapse.
An alicyclic end-capped polymer underlayer improves EUV resist film uniformity and adhesion while reducing pinholes, defects, and line width roughness.
Real-time liquid film monitoring stabilizes substrate coverage during treatment, improving mask etching accuracy while reducing pattern damage.
Alternating etchant and oxidizer pulses remove non-volatile residues from EUV metal oxide photoresists, deterring etch stop and rough edges.
A urea-modified photosensitive polyimide enables low-temperature imidization, high-resolution copper patterning, and stronger adhesion during reflow.
An inhibitor converts 3D metal clusters into chain-linked polymers, reducing cluster residue and surface roughness in substrate patterning.
By limiting photosensitive agent content and acid-generator absorption, this resist film improves pattern resolution and exposure margin.
A urea-modified polyimide precursor enables low-temperature curing with high-resolution relief patterns and strong adhesion on copper wiring.
An inclined de-bubbling slide extends fluid contact time so bubbles and dissolved gases can escape before semiconductor coating deposition.
A multi-acid-generator negative resist composition improves long-term storage stability while preserving high-quality resist pattern formation.
A refractive index gradient formed during grating deposition boosts diffraction efficiency and broadens wavelength operation.
Covalently linking photoacid and diffusion-control moieties in a radiation-sensitive resin improves distribution uniformity, LWR, and exposure latitude.
Photo-initiated imidization lets a polyimide precursor resin cure at 200°C or lower while maintaining storage stability, fine patterns, and chemical resistance.
Fluorine-containing BARC materials lower photoresist affinity to reduce scum, widen lithography process windows, and improve semiconductor yield.