Extended MOS Gate Structure for Leakage Control and Space Efficiency
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in space efficiency and leakage current issues, particularly in multi-device configurations where voltage operations require both low-voltage and high-voltage capabilities, and leakage current can occur even in the gate-off state.
Innovation Solution
The semiconductor device design includes an active region with a channel area between regions of differing conductivity, a gate oxide layer, and a gate metal layer with specific portions inside and outside the active region, optimizing space usage and reducing leakage current by controlling voltage distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor devices are integrated in a semiconductor apparatus to achieve mass capacity and multi-functionality, then the functionality and capacity are improved, but the space efficiency deteriorates due to the physical space required for each device
Solution Approach 1:
The patent merges multiple semiconductor devices into a single integrated apparatus, combining LV and HV operations into one unified structure. This allows multiple devices to share common components and space, thereby improving space efficiency while maintaining multi-functionality.
Solution Approach 2:
The patent designs the semiconductor apparatus to perform multiple functions within a single device structure, enabling both low-voltage and high-voltage operations. This universal design allows the same physical space to serve multiple purposes, improving space utilization.
2Reliability
If the gate metal layer and gate oxide layer are extended outside the active region to control voltage distribution and reduce leakage current, then the reliability is improved, but the device complexity increases due to the extended structure
Solution Approach 1:
The gate metal layer and gate oxide layer are extended outside the active region in advance, before the device operates. This preliminary extension creates a voltage control structure that prevents leakage current and the hump phenomenon before they can occur, thereby improving reliability without requiring complex dynamic control mechanisms.
Data Source
Figure 1~2
Figure 3~4
Figure 5
AI summary
The present disclosure relates to a semiconductor device, and more particularly, to a metal-oxide semiconductor device. The semiconductor device according to an embodiment of the present disclosure may include: an active region including a channel area disposed between a first region and a second region which have a first conductivity and are spaced apart from each other; a gate oxide layer disposed on the active region; and a gate metal layer disposed on the gate oxide layer, wherein at least any one of the gate oxide layer and the gate metal layer includes a first portion located inside the active region and second portions extended and located outside the active region.