FBAR Recessed Frame Structure for Spurious Wave Suppression

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Solution Overview

Problem

Acoustic wave devices, particularly bulk acoustic wave (BAW) resonators, face issues with spurious signals due to transverse acoustic waves generated by compression and relaxation of the piezoelectric material, which degrade the frequency response and are difficult to control during manufacturing.

Innovation Solution

A film bulk acoustic wave resonator (FBAR) design with recessed and raised frame regions having different concentrations of defects and electrode thicknesses creates acoustic velocity discontinuities to prevent transverse waves from entering the main active domain, using a method involving seed layers and over-etching to control the deposition of piezoelectric material and electrodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If transverse acoustic waves are allowed to propagate through the piezoelectric film, then the device structure remains simple, but spurious signals are generated that degrade frequency response

Engineering Contradiction:
Improvefrequency response stabilityVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The piezoelectric film is segmented into distinct regions: a central active region with high-quality piezoelectric material and peripheral frame regions with defective piezoelectric material. This segmentation allows the device to maintain simple overall structure while introducing functional zones that suppress spurious signals through acoustic velocity discontinuities at the boundaries between regions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the piezoelectric film are assigned different material qualities: the central region uses high-quality material for efficient acoustic wave generation and detection, while the frame regions use defective material (with higher dislocation densities) to create acoustic velocity discontinuities that act as barriers to transverse waves, thereby suppressing spurious signals locally without affecting the main active region.

Inventive Principle:
Principle #3Local quality

2Reliability

If uniform piezoelectric material is used throughout the device, then manufacturing is simpler, but transverse acoustic waves cannot be controlled

Engineering Contradiction:
Improvespurious signal suppressionVSAvoidmaterial uniformity control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent implements local quality variations by creating frame regions with deliberately different material properties (higher defect concentrations) compared to the central active region. This is achieved through selective deposition or growth processes that introduce controlled imperfections in specific zones, enabling spurious signal suppression without requiring uniform high-precision manufacturing throughout the entire device.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes material parameters (specifically dislocation density and acoustic velocity) in the frame regions compared to the central region. By controlling the concentration of defects and varying the acoustic velocity in peripheral zones, the invention creates acoustic barriers that prevent transverse wave propagation into the active region, thereby suppressing spurious signals through parameter differentiation rather than uniform material properties.

Inventive Principle:
Principle #35Parameter changes

3Power

If the piezoelectric film is made thicker to improve acoustic wave generation, then main acoustic wave efficiency increases, but transverse wave propagation is enhanced

Engineering Contradiction:
Improveacoustic wave generation efficiencyVSAvoidtransverse wave generation
Core Design Contradiction:
PowerVSObject-generated harmful factors

Solution Approach 1:

The piezoelectric film is divided into functional zones where the central active region can be made sufficiently thick for efficient acoustic wave generation, while the peripheral frame regions are structured to suppress transverse waves. The segmentation allows the main region to optimize for power generation without proportionally increasing transverse wave issues, as the frame regions act as acoustic barriers that contain and dampen transverse wave propagation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent converts the potentially harmful effect of thick piezoelectric material (which can enhance transverse wave propagation) into a benefit by using the frame regions' thickness and defect structure to create acoustic velocity discontinuities. These discontinuities reflect and dampen transverse waves, transforming what could be a harmful propagation path into a beneficial suppression mechanism while maintaining the thickness needed for efficient main acoustic wave generation in the central region.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The FBAR design effectively suppresses spurious signals by refracting transverse waves, reducing manufacturing variability and enhancing the frequency response stability.

Implementation Method 1

A film bulk acoustic wave resonator (FBAR) includes a piezoelectric film disposed in a central region in which a main acoustic wave is generated during operation

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

An acoustic velocity in the piezoelectric film in the recessed frame regions may differ from an acoustic velocity in the piezoelectric film in the raised frame regions. The difference in acoustic velocity in the recessed frame regions and raised frame regions may create an acoustic velocity discontinuity sufficient to prevent transverse acoustic waves travelling through the piezoelectric film outside of the central region from entering the central region

Methodology Applied
Scientific EffectAcoustic wave refraction: Refraction

Data Source

PatentUS11671074B2Recess frame structure for a bulk acoustic wave resonator
Publication Date: 2023.06.06 SKYWORKS GLOBAL PTE LTD
  • US11671074B2 patent drawing
  • US11671074B2 patent drawing
  • US11671074B2 patent drawing

AI summary

A film bulk acoustic wave resonator (FBAR) includes a piezoelectric film disposed in a central region defining a main active domain in which a main acoustic wave is generated during operation, and in recessed frame regions disposed laterally on opposite sides of the central region. The piezoelectric film disposed in the recessed frame regions includes a greater concentration of defects than a concentration of defects in the piezoelectric film disposed in the central region.