FDSOI Back-Gate Diode Temperature Sensing for RF Power Amplifiers
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Solution Overview
Problem
High heat generation and overheating in high-frequency RF power amplifiers degrade performance and impact adjacent circuitry, necessitating effective temperature monitoring without disrupting device operation.
Innovation Solution
Integrated back-gate diodes within FDSOI substrates for in-situ temperature sensing, utilizing a back-gate diode coupled to temperature sensing circuitry to monitor device temperature without additional masks or design impact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high current density is used to operate RF power amplifiers at high frequency, then amplification performance is improved, but heat generation increases causing device overheating
Solution Approach 1:
The back-gate diode is integrated within the FDSOI substrate itself, allowing the device to monitor its own temperature internally without requiring external sensing components. The diode is formed using the same substrate and doping processes, making it a self-contained temperature sensing solution that operates autonomously within the power amplifier structure.
2Measurement precision
If external temperature sensors are added to monitor device temperature, then temperature monitoring capability is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The temperature sensing function is merged with the existing FDSOI substrate structure by forming a back-gate diode within the same substrate. This integration combines the substrate's mechanical support function with temperature sensing capability, eliminating the need for separate external temperature sensor components and reducing overall device complexity.
Solution Approach 2:
The FDSOI substrate serves multiple functions: it provides mechanical support for the device and simultaneously acts as the sensing element for temperature monitoring through the integrated back-gate diode. This multi-functionality allows a single component to fulfill both structural and sensing roles, reducing the total number of components required.
3Measurement precision
If additional temperature sensing components are integrated, then temperature monitoring is improved, but manufacturing process complexity increases
Solution Approach 1:
The back-gate diode is formed using the inherent FDSOI substrate structure and standard doping processes already required for device fabrication. The substrate itself serves as the sensing element, requiring no additional specialized manufacturing steps or external component assembly, thereby maintaining manufacturing simplicity while enabling temperature sensing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Provides low-cost, non-intrusive temperature monitoring in RF/mmW power amplifiers, maintaining device performance by detecting temperature changes and adjusting biasing for cooling, thus preventing overheating.
Implementation Method 1
detecting a current at the back-gate diode during the biasing; and converting the current to a temperature reading of the heat generating device
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture and operation. The structure includes: a semiconductor on insulator substrate; an insulator layer under the semiconductor on the insulator substrate; a handle substrate under insulator layer; a first well of a first dopant type in the handle substrate; a second well of a second dopant type in the handle substrate, adjacent to the first well; and a back-gate diode at a juncture of the first well and the second well.