FeNbHfSb p-type Half-Heusler Thermoelectric Materials

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Solution Overview

Problem

Current p-type Half-Heusler thermoelectric compounds exhibit inferior performance, hindering their application in high-temperature power generation, while p-type FeNbHfSb materials, composed of earth-abundant elements, have been understudied.

Innovation Solution

A high figure of merit p-type FeNbHfSb thermoelectric material with the formulation FeNb1-xHfxSb, where x=0.06-0.2, is developed through levitation melting and spark plasma sintering, achieving a maximum zT of 1.45 at 1200K, with optimized particle size and sintering conditions to enhance thermoelectric properties.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If p-type Half-Heusler thermoelectric compounds are used, then the material can be applied in high-temperature power generation, but the thermoelectric performance is inferior

Engineering Contradiction:
Improvethermoelectric performanceVSAvoidhigh-temperature power generation capability
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The patent applies parameter changes by systematically varying the Hf content (x parameter) in the FeNb1-xHfxSb composition to optimize thermoelectric properties. By changing the atomic percentage of Hf from 0.06 to 0.2, the researchers achieved a maximum zT value of 1.45 at 1200K, resolving the contradiction between temperature capability and performance by finding the optimal compositional parameter

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite materials strategy by creating a quaternary FeNbHfSb half-Heusler compound that combines multiple elements with complementary properties. This composite approach, utilizing earth-abundant elements Fe, Nb, Hf, and Sb, achieves superior p-type thermoelectric performance (zT=1.45) that overcomes the limitations of conventional p-type Half-Heusler materials

Inventive Principle:
Principle #40Composite materials

2Reliability

If n-type ZrNiSn-based half-Heusler compounds are used, then high zT of about 1.0 is achieved, but the corresponding p-type materials have relatively inferior performance with low zT

Engineering Contradiction:
ImprovezT valueVSAvoidp-type material availability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent resolves the imbalance between n-type and p-type half-Heusler performance by changing key parameters: selecting Fe, Nb, Hf, and Sb elements and optimizing the Hf content parameter (x=0.06-0.2). This systematic parameter optimization achieved p-type zT values exceeding 1.0 (maximum 1.45), matching and surpassing conventional n-type materials while providing comparable adaptability for high-temperature applications

Inventive Principle:
Principle #35Parameter changes

3Reliability

If SiGe alloys are used for high-temperature thermoelectric materials, then superior n-type performance with high zT is achieved, but p-type SiGe materials have relatively inferior performance

Engineering Contradiction:
Improven-type thermoelectric performanceVSAvoidp-type material performance
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent addresses the SiGe system's p-type performance limitation by developing a composite FeNbHfSb quaternary half-Heusler material. This composite approach using earth-abundant elements achieves p-type zT=1.45, providing both n-type and p-type materials with comparable superior performance and adaptability for high-temperature thermoelectric applications, replacing the unbalanced SiGe system

Inventive Principle:
Principle #40Composite materials

4Reliability

If FeNbHfSb thermoelectric materials are developed, then high zT value is achieved, but the materials are understudied with limited existing research

Engineering Contradiction:
ImprovezT valueVSAvoidfabrication difficulty
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent resolves the challenge of manufacturing understudied FeNbHfSb materials by systematically optimizing compositional parameters (Hf content x=0.06-0.2) and processing parameters (sintering temperature, time, and pressure). This parameter optimization achieved high zT values (maximum 1.45) while establishing reproducible fabrication protocols, making the material both high-performance and manufacturable

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The FeNbHfSb material demonstrates the highest zT value among p-type half-Heusler compounds, offering excellent thermal stability, ease of fabrication, and high efficiency for high-temperature power generation with earth-abundant and low-cost elements.

Implementation Method 1

The ingots with nominal composition FeNb1-xHfxSb were prepared by levitation melting of stoichiometric amounts of Fe, Nb, Hf, Sb under an argon atmosphere

Methodology Applied
Scientific EffectMelting: Melting

Implementation Method 2

The ingots are pulverized and then sintered to obtain the bulk p-type FeNbHfSb thermoelectric materials

Methodology Applied
Scientific EffectSintering: Sintering

Implementation Method 3

If there is a temperature difference across the thermoelectric material, heat energy can be converted into electricity, which is called the Seebeck effect

Methodology Applied
Scientific EffectSeebeck effect: Seebeck Effect

Implementation Method 4

If there is an electric field across the thermoelectric material, the electricity can be converted into heat energy, which leads to heat releasing on one side of the material while the other side will absorb heat energy. This is called the Peltier effect

Methodology Applied
Scientific EffectPeltier effect: Peltier Effect

Data Source

PatentUS10553771B2High figure of merit p-type FeNbHfSb thermoelectric materials and the preparation method thereof
Publication Date: 2020.02.04 ZHEJIANG UNIV
  • US10553771B2 patent drawing
  • US10553771B2 patent drawing
  • US10553771B2 patent drawing

AI summary

The present invention discloses a type of high figure of merit p-type FeNbHfSb thermoelectric material, whose composition is FeNb1-xHfxSb, wherein x=0.06˜0.2. The present invention also discloses the method to prepare these p-type FeNbHfSb thermoelectric materials. The ingots with nominal composition FeNb1-xHfxSb are prepared by levitation melting of stoichiometric amounts of Fe, Nb, Hf and Sb under an argon atmosphere. The obtained ingots are mechanically milled to get submicron-scale powders. The obtained powders are compacted by spark plasma sintering to obtain the final bulk p-type FeNbHfSb thermoelectric materials. The compositional elements of these p-type FeNbHfSb thermoelectric materials are abundant in the earth crust. The p-type thermoelectric materials also shows good high temperature stability and the preparation method are simple and high-yield. Therefore, the industrial production cost would be relatively cheap. The maximum zT value of the p-type thermoelectric materials is ˜1.45 at 1200K, which is the highest value among the p-type half-Heusler system.