Retained semiconductor fins exploit the Seebeck effect to convert waste heat from active circuits into supplemental power, reducing overall device consumption.
Composite structures decouple electronic and thermal conductivity to achieve figure of merit greater than 2, overcoming bulk material limitations.
R1-xMnxCuP phosphide compounds convert heat to electricity using magnesium, manganese, copper, and phosphorus elements.
Optimized filled skutterudite composition resists element sublimation at 600°C while maintaining high conversion efficiency.
A stacked power interconnection line without insulating layers stabilizes opposite electrode contacts in organic light-emitting displays.
Nano-carbon units spaced in a thermoelectric matrix boost the ZT value by obstructing phonon transmission to improve energy conversion efficiency.
Tetrahedrite thermoelectric materials utilize earth-abundant copper and antimony to achieve high figure of merit values.
A composite thermoelectric material uses a nanoscale heterophase to selectively transport carriers.
A nanocrystalline thermoelectric material combines metal oxide powder with thermoelectric particles to maximize the figure of merit.
LSMO/LMO superlattices reduce cross-plane thermal conductivity through pulsed laser deposition epitaxial growth.
Doped calcium cobaltite ceramic maintains stability up to 800°C while resolving efficiency and thermal reliability contradictions.
CuxSe thermoelectric material utilizes multi-phase crystal transitions to maintain high conversion efficiency across broad temperature ranges.
Metal nanoparticles in a thermoelectric matrix enhance electrical conductivity through controlled work function differences.
Optimized FeNbHfSb half-Heusler materials resolve inferior p-type performance by achieving a maximum zT of 1.45 at 1200K via parameter changes.
MXene coating at crystal grain boundaries increases electrical conductivity in sintered thermoelectric materials.
A bulk-processed thermoelectric material uses a dispersed second phase to form partially coherent interfaces within a semiconductor host.
A polymer-based igneoelectric material converts spatially uniform thermal energy into voltage through oriented conductive percolation channels.
A nanocomposite thermoelectric material disperses nanosized phonon-scattering particles within a polycrystalline matrix to enhance conversion efficiency.
Liquid phase sintering decouples Seebeck coefficient from conductivity in doped CaMnO3, raising ZT to 0.67 at 773 K.
Doping iron with iridium raises the anomalous Nernst angle above 30%, solving low voltage generation limits in magnetic thermoelectric devices.
A thermoelectric material with an L21 crystal phase reduces thermal conductivity to enhance the figure of merit Z, replacing toxic Bi-Te and Pb-Te substances.
Graphene and metal particles at grain interfaces block cracks and buffer forces, extending Mg-Si module lifetime.
A polycrystalline half-Heusler material with a MgAgAs crystal structure stabilizes thermoelectric conversion through precise atomic ratio control.
A thermoelectric conversion material with a layered bronze structure reduces electric resistivity at high temperatures.