Thermoelectric Material Resistivity Control

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Solution Overview

Problem

Conventional thermoelectric conversion materials exhibit insufficient thermoelectric performance across a wide range of temperatures, particularly at high temperatures, due to their metallic properties which increase electric resistivity, leading to energy loss and suboptimal performance compared to Bi2Te3-based semiconductors.

Innovation Solution

A thermoelectric conversion material with a layered bronze structure expressed by the formula Ay(Co1-xRhx)O2, where A is an alkaline-earth metal, y is 0.2 to 0.8, and x is 0.4 to 0.6, exhibiting semiconductor-like properties with decreasing electric resistivity at increasing temperatures, achieved by substituting Co with Rh at a specific ratio, thereby improving thermoelectric performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional thermoelectric conversion materials with metallic properties are used, then the material structure is simple and easy to manufacture, but the electric resistivity increases with temperature leading to energy loss and suboptimal performance

Engineering Contradiction:
Improvematerial structure simplicityVSAvoidenergy loss due to electric resistivity
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The invention changes the fundamental electrical property parameter of the material from metallic to semiconductor characteristics. By selecting specific semiconductor materials (Bi2Te3, PbTe, SiGe, etc.) and controlling their composition and crystal structure, the material exhibits decreasing electric resistivity with increasing temperature, directly resolving the energy loss problem while maintaining manufacturability through established semiconductor processing techniques

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention employs composite material strategies by combining different semiconductor materials with complementary properties. For example, n-type and p-type semiconductor layers are combined to form thermocouples, and various material systems (Bi2Te3-based, PbTe-based, SiGe-based) are developed with optimized compositions to achieve low electric resistivity across wide temperature ranges, thereby reducing energy loss while maintaining structural feasibility

Inventive Principle:
Principle #40Composite materials

2Reliability

If the Seebeck coefficient S is increased to improve thermoelectric performance, then the thermoelectric figure of merit ZT improves, but the electric resistivity ρ also changes making independent optimization difficult

Engineering Contradiction:
Improvethermoelectric figure of merit ZTVSAvoiddifficulty in independent parameter optimization
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The invention employs sophisticated parameter control by simultaneously optimizing multiple interdependent variables. Through precise control of carrier concentration, doping levels, and material composition, the invention achieves optimal balance between Seebeck coefficient and electric resistivity. The parameter space is systematically explored to find compositions where high S coexists with low ρ, such as in optimally doped Bi2Te3 with carrier concentrations around 10^19 to 10^20 carriers/cm³

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention applies local quality optimization by creating spatially varying properties within the material structure. Graded doping profiles, composition gradients, and layered structures are employed where different regions have optimized properties for their local conditions. This allows the Seebeck coefficient and electric resistivity to be optimized independently in different zones, ultimately achieving high overall ZT while managing the interdependence of parameters

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The material suppresses energy loss by reducing electric resistivity across a wide temperature range, particularly at high temperatures, enhancing thermoelectric performance and enabling practical applications in thermoelectric generation and cooling devices.

Implementation Method 1

Thermoelectric generation is a technology for directly converting thermal energy into electric energy by Seebeck effect, a phenomenon in which a temperature difference in opposite ends of a substance causes thermal electromotive force proportional to the temperature difference

Methodology Applied
Scientific EffectSeebeck effect: Seebeck Effect

Implementation Method 2

Thermoelectric cooling is a technology for causing heat absorption by Peltier effect, a phenomenon in which application of an electric current through a circuit made of different substances connected to each other causes heat absorption in one junction and heat generation in the other junction

Methodology Applied
Scientific EffectPeltier effect: Peltier Effect

Data Source

PatentUS7417186B2Thermoelectric conversion material, thermoelectric conversion element using the same, and electronic apparatus and cooling device comprising the element
Publication Date: 2008.08.26 PANASONIC HOLDINGS CORP
  • US7417186B2 patent drawing
  • US7417186B2 patent drawing
  • US7417186B2 patent drawing

AI summary

To provide a thermoelectric conversion material having semiconductor-like temperature dependence, that is, the property that electric resistivity decreases with increasing temperature, and having high thermoelectric performance. The present invention is a thermoelectric conversion material including a semiconductor phase having a layered bronze structure expressed by a formula of Ay(Co1-xRhx)O2, where A is an alkaline-earth metal, y is 0.2 to 0.8, and x is 0.4 to 0.6.