Ferroelectric Capacitor Bit Cell Nonvolatile Logic

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Solution Overview

Problem

Existing portable electronic devices face challenges in reducing leakage current during standby power mode, requiring continuous power to retain state information, which is inefficient for battery-operated devices and energy harvesting applications.

Innovation Solution

The implementation of nonvolatile logic (NVL) using ferroelectric capacitors in System on Chip (SoC) designs, allowing complete power removal without losing state information, with NVL arrays dispersing throughout the logic cloud to save and restore flip-flop states efficiently.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If shadow latch is used to retain state information during standby power mode, then data retention is improved, but leakage current is reduced only partially and additional power supply circuitry is required

Engineering Contradiction:
Improvedata retentionVSAvoidleakage current
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent changes the fundamental parameter of state retention from volatile (requiring continuous power) to non-volatile (retaining state without power). By using ferroelectric capacitors with hysteresis characteristics, the circuit maintains its state information through material property changes rather than continuous electrical supply, achieving zero leakage current while preserving data retention capability.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent extracts the power dependency from the state retention function. Instead of using active circuitry (shadow latch) that requires continuous power supply, the invention uses passive ferroelectric capacitors that retain state information without any power connection, completely removing the energy consumption aspect from the data retention mechanism.

Inventive Principle:
Principle #2Taking out (Extraction)

2Loss of energy

If thick gate oxide transistors and high threshold voltage transistors are used in shadow latch, then leakage current is reduced, but device complexity and area overhead increase

Engineering Contradiction:
Improveleakage currentVSAvoidshadow latch circuitry
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent replaces complex, power-intensive shadow latch circuitry with simple ferroelectric capacitor structures. The ferroelectric material itself provides the retention function without requiring additional transistors or complex circuit configurations, significantly reducing device complexity and area overhead while achieving the same leakage reduction goal.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Productivity

If continuous power is provided to logic circuits, then system performance is maintained, but energy consumption increases for battery-operated devices

Engineering Contradiction:
Improvesystem performanceVSAvoidenergy consumption
Core Design Contradiction:
ProductivityVSUse of energy by moving object

Solution Approach 1:

The patent performs preliminary action by storing the state information in ferroelectric capacitors before power removal. This allows the system to be completely powered down without losing operational state, enabling zero energy consumption during standby while maintaining the ability to rapidly restore full system performance when power is reapplied.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables zero leakage in sleep mode and rapid system state restoration, reducing energy consumption and eliminating the need for constant power sources, ideal for energy harvesting applications and handheld devices with limited resources.

Implementation Method 1

Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line

Methodology Applied
Scientific EffectFerroelectricity:

Implementation Method 2

A clamping circuit is coupled to the node Q and is operable to clamp the node Q to a voltage approximately equal to first voltage while the bit cell is not being accessed

Methodology Applied
Scientific EffectElectrical field control: Electric Field

Data Source

PatentUS8797783B1Four capacitor nonvolatile bit cell
Publication Date: 2014.08.05 TEXAS INSTRUMENTS INC
  • US8797783B1 patent drawing
  • US8797783B1 patent drawing
  • US8797783B1 patent drawing

AI summary

A system on chip (SoC) provides a memory array of nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line, such that a node Q is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to first voltage while the bit cell is not being accessed. A clamping circuit is coupled to the node Q and is operable to clamp the node Q to a voltage approximately equal to first voltage while the bit cell is not being accessed.