Ferroelectric Capacitor Electrode Carbon Enrichment

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Solution Overview

Problem

Ferroelectric capacitors in integrated circuitry face challenges with high imprint, low retention, and endurance issues due to the formation of non-ferroelectric oxide layers and oxygen injection, which affect the crystallization and properties of the ferroelectric dielectric material.

Innovation Solution

Increasing the carbon content in the outermost region of the inner conductive electrode material before forming the ferroelectric capacitor dielectric, either through ion implantation or diffusion, to prevent the formation of non-ferroelectric oxide layers and facilitate better crystallization of the ferroelectric dielectric material, thereby improving endurance, retention, and reducing imprint.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional capacitor formation methods are used, then manufacturing simplicity is maintained, but non-ferroelectric oxide layers form and oxygen is injected, causing high imprint, low retention, and poor endurance

Engineering Contradiction:

Improveferroelectric capacitor reliabilityVSAvoidprocess complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

Carbon is introduced into the inner electrode material before capacitor formation through ion implantation or diffusion processes. This preliminary carbon enrichment prevents oxide formation and oxygen injection during subsequent capacitor fabrication, thereby improving reliability without requiring complex post-processing steps

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The carbon concentration in the inner electrode material is modified to achieve optimal prevention of oxide formation. By controlling carbon content through ion implantation dosage or diffusion parameters, the patent achieves improved capacitor reliability while managing process complexity

Inventive Principle:

Principle #35Parameter changes

2Manufacturing precision

If carbon content is increased in the inner electrode material, then non-ferroelectric oxide formation is reduced and crystallization is improved, but additional processing steps are required

Engineering Contradiction:

Improveferroelectric dielectric crystallization qualityVSAvoidmanufacturing ease

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

Carbon content in the inner electrode material is precisely controlled through ion implantation or diffusion processes to optimize ferroelectric dielectric crystallization. The carbon concentration is adjusted to prevent oxide formation while maintaining manufacturing feasibility through established semiconductor processing techniques

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

Traditional mechanical mixing or alloying methods are replaced with ion implantation or diffusion processes to introduce carbon into the inner electrode material. These alternative methods provide better control over carbon distribution and concentration, improving crystallization quality while maintaining ease of manufacture through standard semiconductor fabrication processes

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method enhances the properties of ferroelectric capacitors by reducing non-ferroelectric oxide formation, leading to improved endurance, retention, and lower imprint, resulting in better performance and reliability of the capacitors.

Implementation Method 1

Increasing the carbon content in the outermost region of the inner conductive electrode material before forming the ferroelectric capacitor dielectric, either through ion implantation or diffusion

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Implementation Method 2

Increasing the carbon content in the outermost region of the inner conductive electrode material before forming the ferroelectric capacitor dielectric, either through ion implantation or diffusion

Methodology Applied

Scientific EffectDiffusion: Diffusion

Implementation Method 3

facilitate better crystallization of the ferroelectric dielectric material

Methodology Applied

Scientific EffectCrystallization: Crystallisation

Data Source

PatentUS20150303206A1Methods Of Forming Ferroelectric Capacitors

Publication Date: 2015.10.22 MICRON TECHNOLOGY INC

AI summary

A method of forming a ferroelectric capacitor includes forming inner conductive capacitor electrode material over a substrate. After forming the inner electrode material, an outermost region of the inner electrode material is treated to increase carbon content in the outermost region from what it was prior to the treating. After the treating, ferroelectric capacitor dielectric material is formed over the treated outermost region of the inner electrode material. Outer conductive capacitor electrode material is formed over the ferroelectric capacitor dielectric material.