Solid-State Devices TRIZ Cases

Applying a repellent layer defines non-emitting zones in OLEDs, removing shadow mask requirements and enabling full enclosure of complex patterns.

A gate-last process forms monolithic three-dimensional nonvolatile memory arrays with distinct semiconductor layers.

Dry and wet stretching of dehydrated polyvinyl alcohol creates a thin polarizer that maintains high polarization despite reduced thickness.

Segmented data lines and common electrodes minimize parasitic capacitance, eliminating bright and dark display lines.

Segmented detector blocks with dual-ended APD readout improve spatial resolution and reduce false positives in breast cancer imaging.

Triplet harvesting complex transfers singlet and triplet excitons to phosphorescent dopant, reducing roll-off and extending operational life.

Hydrolytic bonding separates thick support from thin glass, preventing warpage and ensuring alignment precision during packaging.

A wiring electrode connects the OLED second electrode to power wirings through contact holes in stacked insulating layers.

Composite host materials in organic electroluminescent devices boost current efficiency while reducing driving voltage and extending operational lifespan.

Performing laser stealth dicing on the exposed wafer back surface eliminates laser attenuation through dicing tape, lowering material costs.

Segmenting gate plates with varying contact areas enables multi-bit storage in phase change material, reducing chip size without increasing device complexity.

Precise viscosity control of curable resin maintains dimensional stability, resolving moisture permeation risks in large thin-film OLED panels.

Optimizing cerium and lithium ratios in a CaAlSiN3 host resolves the trade-off between emission intensity and efficiency for stable LED applications.

A diode design uses a second transistor to compete with parasitic structures, directing current flow through modified doping regions.

An etch stop pattern guides the slit insulating layer intersection, preventing electrical bridges that degrade yield in high density memory devices.

A cup-shaped metal layer houses an indium bump to increase contact area and bonding strength for semiconductor light-receiving elements.

A homojunction organic electroluminescent element uses a single charge transport layer doped with blocking regions to enhance electron-hole recombination.

Fabricating SOI trench isolations using segmented etching and silicon nitride deposition to establish stable isolation structures.

Curved banks guide ink flow to prevent non-uniform drying, resolving aperture ratio drops and shortened panel duration.

Flexible organic optoelectronic sensors use OLEDs and OPDs to enable multi-channel reflectance monitoring.

OLED display device uses through-hole camera isolation and encapsulation to prevent water vapor ingress while maintaining package reliability.

Selective polymer wrapping isolates semiconducting carbon nanotubes, reducing dark current and expanding near-infrared sensitivity in photoelectric devices.

Replacing metal-insulator-metal capacitors with doped semiconductor regions increases capacitance five to fifty times while lowering manufacturing costs.

Merging transfer transistors and a common floating diffusion region simplifies manufacturing complexity while enhancing optical signal conversion accuracy.

A photosensor array uses a bulk heterojunction layer to detect light while a moisture barrier protects the device.

Continuous organic particle removal via a rotating window and static grabber maintains laser efficiency without halting production for chamber cleaning.

Laser ablation breaks conductive paths in non-display regions of an organic EL display to prevent short circuits and eliminate luminous line-like tails.

Varying the organic layer thickness creates distinct trigger threshold voltages, eliminating complex addressing circuits in vu-meter displays.

Shaping element adjusts curvature radius of liquid material layer under elastomeric membrane to correct focal depth variations across wafer segments.

Waterproof breathable membranes cover acoustic holes in MEMS sensors, blocking water and dust ingress while allowing airflow vibrations to reach the die.

Direct conversion in a bonded monolithic detector overcomes indirect scattering losses and thermal incompatibility between absorbers and electronics.

Supporting pillars penetrate and surround contacts within a stacked structure to constrain etchant flow, preventing sacrificial layer over-etching.

Vertical stacking of resistive unit memory cells increases integration density without reducing minimum feature size.

A refractive capping layer controls amorphous silicon crystallization into polycrystalline silicon with large grain size.

Conforming the flexible display cathode to arc-shaped pixel defining layer grooves releases stress concentration that causes plate-shaped metal breakage.

Curved grooves in nitride semiconductor layers redirect trapped light to overcome total internal reflection and boost brightness.

Localized annealing opens diffusion barriers to extract codopants from buried doped layers, enhancing electrical conductivity and reducing operating voltage.

Laser ablation creates sacrificial masks to define high resolution organic thin film patterns without damaging functional layers.

Metal nanoparticles in the pixel defining layer enhance localized surface plasmon resonance to improve light scattering and absorption.

Boron diffusion annealing forms thin P-type regions in CMOS image sensors, reducing crystallization defects and dark current.

Bridged aluminum phthalocyanine pigment combined with a secondary absorber creates a green color filter with high transmittance.

Replacing copper sulfonate salt with copper phosphate salt reduces solution viscosity while maintaining high near-infrared absorption intensity.

A flexible film in the peripheral area supports thin film transistors and gate wiring layers on a stepped surface.

NAND memory array employs PHINES cells to enable multi-bit storage, reducing fabrication complexity and bit line contact precision requirements.

Sidewall electrodes redirect internally reflected light, boosting extraction efficiency.

A multi-layer metal gate structure with distinct work function layers enables precise threshold voltage adjustment in semiconductor devices.

Monocrystalline III-V emissive layer transferred to a handle substrate using low-temperature PECVD amorphous silicon carbide injection layers.

A scattering film with specific particles enhances light utilization efficiency in organic electroluminescent devices.

Magnetically conductive partial rings form a complete ring around the conductor, guiding flux to a Hall sensor for accurate measurement on multilayer boards.

A dual-layer optical film uses obliquely tilted liquid crystals to reduce viewing angle dependency in flat panel displays.

A display panel design uses patterning processes to form driving wires between exposed micro LED electrodes and substrate electrodes.

A hardened protection sheet increases wafer rigidity, preventing chipping and instability during high-speed thin wafer dicing.

A split-gate MONOS FinFET uses a high-concentration p-type layer under the memory gate to generate a stronger vertical electric field.

Segmented PMOSFET diodes with isolated bodies eliminate leakage currents, boosting Dickson charge pump efficiency from 3.27% to 6.06%.

Stacked bit line interconnections at varying heights increase contact area while reducing parasitic capacitance.

Lateral metal emitter interconnects reduce mechanical stress on the emitter region, minimizing input offset voltage drift during thermal cycling.

Location-based resistance networks in a variably resistive memory device manage peak currents during write operations, preventing adjacent cell failures.

Composite host materials balance triplet levels and thermal stability to resolve efficiency-reliability trade-offs in organic light emitting elements.

Gate transmission wiring merges with the common electrode to generate a horizontal electric field, resolving poor side visibility in liquid crystal displays.

Asymmetric termination structures distribute electrical fields to enhance breakdown voltage while reducing drain-to-source on-resistance.

An ejector assembly transfers electronic components from a die sheet onto a substrate to form predefined patterns.

A conical cover mates with a shiftable frame to position an optical objective above a sensor.

Porous silicon oxide layers facilitate wafer separation, eliminating the need for new support substrates and lowering manufacturing costs.

Index matching material fills gaps between optical elements to transmit light while scattering surfaces redirect stray reflections.

A resin package wall isolates silver lead frames and wires, preventing sulfuration while maintaining high light extraction efficiency.

Multi-layer encapsulation structure with specific thickness ratios minimizes luminance and color differences across display pixels.

Grouping stacked word lines across memory blocks reduces peripheral circuit complexity while increasing integration density.

A waved metal pad interface prevents indium tin oxide peeling and corrosion in non-displaying regions of active matrix organic light-emitting diode panels.

A thin film transistor structure positions drain and source electrodes to avoid gate overlap, creating a high resistance region that reduces OFF current.

A first hole transporting layer containing specific compounds reduces drive voltage in organic electroluminescence devices.

An inclined encapsulation substrate guides film extension to prevent disconnection in organic light emitting diode displays.

Hard mask segmentation and specific CF4, CHF3, and oxygen flow ratios prevent photoresist erosion during plasma etching to maintain 45nm precision.

Dendron phosphorescent compounds extend luminance life by stabilizing the emitting layer against degradation.

Dual-mode reset stabilizes resistance transitions, reducing defective operations and standby power in programmable logic integrated circuits.

Polyimide microfluidic chips enable infrared radiation penetration for surface plasmon resonance, resolving glass transparency limits.

Varying electrode branch distances on the second conductive semiconductor layer facilitates uniform current diffusion in light-emitting devices.

Orthogonal endcap sections coupled with interdigitated conductive fingers reduce capacitance variance caused by double patterning misalignment.

Photosensitive sensor integrated into array substrate detects pixel luminance to compensate aging-related brightness variations.

A surrounding organic pattern isolates the outer power line from static electricity in display devices.

Carbon enrichment prevents non-ferroelectric oxide formation and oxygen injection, improving capacitor endurance and retention.

Colloidally deposited quantum dots form a lattice within an inorganic matrix that stabilizes electrical properties.

A semiconductor memory device uses a driver to pre-charge the bit line before data transfer begins.

A single-transistor non-volatile memory cell uses a substrate-embedded back-gate as the select gate to reduce chip area.

Sequential lamination of organic layers inside a single vacuum chamber reduces manufacturing complexity and cycle time.

Multi-layer tunneling structures prevent erase saturation and improve charge retention by controlling electron injection.

A vertical memory cell combines semiconductor and resistance change layers to control current flow through localized voltage application.

Space regions between floating node and pinning layer prevent leakage paths, eliminating white pixel patterns caused by scaling down geometry.

Varistor film diverts surge current between electrodes, protecting the semiconductor layer from electrostatic discharge damage without increasing device size.

Winding wires absorb compressive and tensile stresses during repeated folding to prevent mechanical damage.

An absorbing layer in the charge generation unit shifts broad OLED emission to deep red, resolving spectral accuracy issues for automotive rear lights.

Opposite conductivity doping in the edge region suppresses parasitic bipolar junction transistor effects, stabilizing drain current characteristics.

An amine-based interlayer facilitates balanced charge transport between the emission layer and hole transport region in organic light-emitting devices.

An asymmetric partition wall structure in organic electroluminescence display panels prevents ink running during layer formation.

A precision waveguide interface couples millimeter wave energy using a launch transducer and rectangular slot.

A radiation sensing device applies a positive bias voltage to a second gate electrode during standby mode.

Reducing gate electrode doping prevents B mode failure in narrow transistors while maintaining drive current.

A touch display panel uses segmented gasket structures to establish flat contact surfaces between conductive layers.

Trenches in the planarization layer prevent moisture penetration that causes TFT current leakage and failure.

Grouped cathode electrodes intersect black matrices to form a touch sensor within the display structure.