Solid-State Devices TRIZ Cases

Applying a repellent layer defines non-emitting zones in OLEDs, removing shadow mask requirements and enabling full enclosure of complex patterns.

A gate-last process forms monolithic three-dimensional nonvolatile memory arrays with distinct semiconductor layers.

Dry and wet stretching of dehydrated polyvinyl alcohol creates a thin polarizer that maintains high polarization despite reduced thickness.

Segmented data lines and common electrodes minimize parasitic capacitance, eliminating bright and dark display lines.

Segmented detector blocks with dual-ended APD readout improve spatial resolution and reduce false positives in breast cancer imaging.

Triplet harvesting complex transfers singlet and triplet excitons to phosphorescent dopant, reducing roll-off and extending operational life.

Hydrolytic bonding separates thick support from thin glass, preventing warpage and ensuring alignment precision during packaging.

A wiring electrode connects the OLED second electrode to power wirings through contact holes in stacked insulating layers.

Composite host materials in organic electroluminescent devices boost current efficiency while reducing driving voltage and extending operational lifespan.

Performing laser stealth dicing on the exposed wafer back surface eliminates laser attenuation through dicing tape, lowering material costs.

Segmenting gate plates with varying contact areas enables multi-bit storage in phase change material, reducing chip size without increasing device complexity.

Precise viscosity control of curable resin maintains dimensional stability, resolving moisture permeation risks in large thin-film OLED panels.

Optimizing cerium and lithium ratios in a CaAlSiN3 host resolves the trade-off between emission intensity and efficiency for stable LED applications.

A diode design uses a second transistor to compete with parasitic structures, directing current flow through modified doping regions.

An etch stop pattern guides the slit insulating layer intersection, preventing electrical bridges that degrade yield in high density memory devices.

A cup-shaped metal layer houses an indium bump to increase contact area and bonding strength for semiconductor light-receiving elements.

A homojunction organic electroluminescent element uses a single charge transport layer doped with blocking regions to enhance electron-hole recombination.

Fabricating SOI trench isolations using segmented etching and silicon nitride deposition to establish stable isolation structures.

Curved banks guide ink flow to prevent non-uniform drying, resolving aperture ratio drops and shortened panel duration.

Flexible organic optoelectronic sensors use OLEDs and OPDs to enable multi-channel reflectance monitoring.

OLED display device uses through-hole camera isolation and encapsulation to prevent water vapor ingress while maintaining package reliability.

Selective polymer wrapping isolates semiconducting carbon nanotubes, reducing dark current and expanding near-infrared sensitivity in photoelectric devices.

Replacing metal-insulator-metal capacitors with doped semiconductor regions increases capacitance five to fifty times while lowering manufacturing costs.

Merging transfer transistors and a common floating diffusion region simplifies manufacturing complexity while enhancing optical signal conversion accuracy.

A photosensor array uses a bulk heterojunction layer to detect light while a moisture barrier protects the device.

Continuous organic particle removal via a rotating window and static grabber maintains laser efficiency without halting production for chamber cleaning.

Laser ablation breaks conductive paths in non-display regions of an organic EL display to prevent short circuits and eliminate luminous line-like tails.

Varying the organic layer thickness creates distinct trigger threshold voltages, eliminating complex addressing circuits in vu-meter displays.

Shaping element adjusts curvature radius of liquid material layer under elastomeric membrane to correct focal depth variations across wafer segments.

Waterproof breathable membranes cover acoustic holes in MEMS sensors, blocking water and dust ingress while allowing airflow vibrations to reach the die.

Direct conversion in a bonded monolithic detector overcomes indirect scattering losses and thermal incompatibility between absorbers and electronics.

Supporting pillars penetrate and surround contacts within a stacked structure to constrain etchant flow, preventing sacrificial layer over-etching.

Vertical stacking of resistive unit memory cells increases integration density without reducing minimum feature size.

A refractive capping layer controls amorphous silicon crystallization into polycrystalline silicon with large grain size.

Conforming the flexible display cathode to arc-shaped pixel defining layer grooves releases stress concentration that causes plate-shaped metal breakage.

Curved grooves in nitride semiconductor layers redirect trapped light to overcome total internal reflection and boost brightness.

Localized annealing opens diffusion barriers to extract codopants from buried doped layers, enhancing electrical conductivity and reducing operating voltage.

Laser ablation creates sacrificial masks to define high resolution organic thin film patterns without damaging functional layers.

Metal nanoparticles in the pixel defining layer enhance localized surface plasmon resonance to improve light scattering and absorption.

Boron diffusion annealing forms thin P-type regions in CMOS image sensors, reducing crystallization defects and dark current.

Bridged aluminum phthalocyanine pigment combined with a secondary absorber creates a green color filter with high transmittance.

Replacing copper sulfonate salt with copper phosphate salt reduces solution viscosity while maintaining high near-infrared absorption intensity.

A flexible film in the peripheral area supports thin film transistors and gate wiring layers on a stepped surface.

NAND memory array employs PHINES cells to enable multi-bit storage, reducing fabrication complexity and bit line contact precision requirements.

Sidewall electrodes redirect internally reflected light, boosting extraction efficiency.

A multi-layer metal gate structure with distinct work function layers enables precise threshold voltage adjustment in semiconductor devices.

Monocrystalline III-V emissive layer transferred to a handle substrate using low-temperature PECVD amorphous silicon carbide injection layers.

A scattering film with specific particles enhances light utilization efficiency in organic electroluminescent devices.

Magnetically conductive partial rings form a complete ring around the conductor, guiding flux to a Hall sensor for accurate measurement on multilayer boards.