Image Sensor Shared Floating Diffusion for Organic-Semiconductor Integration
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Solution Overview
Problem
Current image sensors face challenges in integrating semiconductor and organic photoelectric conversion elements efficiently, leading to complexities in manufacturing and reduced accuracy in optical signal conversion.
Innovation Solution
The design incorporates a shared structure where transfer transistors for both semiconductor and organic photoelectric conversion elements share a floating diffusion region, simplifying the process by forming a contact for the penetration electrode connected to the organic photoelectric conversion element and the transfer transistor, thereby improving integration and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate structures are used for semiconductor and organic photoelectric conversion elements, then each element can be optimized independently, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent merges the structures of semiconductor and organic photoelectric conversion elements by sharing common components including transfer transistors, floating diffusion regions, and penetration electrodes. This integration reduces device complexity while maintaining the ability to optimize each photoelectric conversion element type through shared architectural design.
Solution Approach 2:
The patent implements universal components that serve multiple functions: transfer transistors transfer charges from both semiconductor and organic photoelectric conversion elements, floating diffusion regions collect charges from both types, and penetration electrodes provide electrical connections for both. This multi-functionality reduces overall device complexity while preserving optimization capabilities.
2Reliability
If separate structures are used for semiconductor and organic photoelectric conversion elements, then each element can be optimized independently, but the manufacturing process complexity increases
Solution Approach 1:
The patent combines manufacturing processes by forming transfer transistors, floating diffusion regions, and penetration electrodes that serve both semiconductor and organic photoelectric conversion elements simultaneously. This merging of manufacturing steps reduces process complexity while maintaining the ability to independently optimize each photoelectric conversion element type.
3Reliability
If separate structures are used for semiconductor and organic photoelectric conversion elements, then each element can be optimized independently, but the degree of integration is reduced
Solution Approach 1:
The patent merges the structural organization of semiconductor and organic photoelectric conversion elements by placing them within shared pixel regions and using common transfer transistors and floating diffusion regions. This increases the degree of integration while preserving the ability to optimize each element type through their shared architectural framework.
4Reliability
If separate structures are used for semiconductor and organic photoelectric conversion elements, then each element can be optimized independently, but the number of manufacturing steps increases
Solution Approach 1:
The patent combines manufacturing steps by forming transfer transistors, floating diffusion regions, and penetration electrodes that serve both semiconductor and organic photoelectric conversion elements in integrated processes. This reduces the total number of manufacturing steps while maintaining the ability to independently optimize each photoelectric conversion element type through shared design principles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the degree of integration and accuracy of optical signal conversion, simplifying the manufacturing process and improving the overall performance of the image sensor.
Implementation Method 1
The first semiconductor photoelectric conversion element may be inside the substrate such that the first semiconductor photoelectric conversion element is at least partially enclosed by the substrate
Implementation Method 2
The organic photoelectric conversion element may be on the second surface of the substrate
Data Source
AI summary
An image sensor includes a substrate which includes a first surface and a light-incident second surface facing the first surface, a first semiconductor photoelectric conversion element inside the substrate, an organic photoelectric conversion element on the second surface of the substrate, a first floating diffusion region on the first surface of the substrate, a first transfer transistor having a first end connected to the first semiconductor photoelectric conversion element and a second end connected to the first floating diffusion region, and a second transfer transistor having a first end connected to the organic photoelectric conversion element and a second end connected to the first floating diffusion region. The first semiconductor photoelectric conversion element, the first floating diffusion region, and the first transfer transistor and the second transfer transistor may be in a first pixel region of the substrate.