Ferroelectric Capacitor Composite Oxide Stack for Read Stability
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Solution Overview
Problem
Ferroelectric capacitors and field effect transistors face challenges in maintaining the polarization state during memory cell read operations, often requiring immediate re-write after reading due to the reversal of polarization states, which affects the non-volatility and reliability of memory storage.
Innovation Solution
A method involving a composite stack of non-ferroelectric metal oxides is used to render a non-ferroelectric metal oxide-comprising insulator material ferroelectric, allowing for stable polarization states without reversing during read operations, and this composite stack is integrated into the formation of ferroelectric capacitors and field effect transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ferroelectric material is used in memory cells, then non-volatile storage is achieved, but polarization state reversal during read operations requires immediate re-write
Solution Approach 1:
A composite stack comprising at least two different composition non-ferroelectric metal oxides is introduced as an intermediary layer between the ferroelectric capacitor and the read circuitry. This composite stack prevents polarization state reversal during read operations, eliminating the need for immediate re-write and reducing the time loss associated with maintaining non-volatile storage reliability.
2Stability of the object's composition
If conventional ferroelectric capacitors are used, then stable polarization states are achieved, but thermal processing requirements increase
Solution Approach 1:
The patent employs a composite stack made of at least two different composition non-ferroelectric metal oxides. This composite material structure provides the necessary stability for polarization states while requiring reduced thermal processing temperatures compared to conventional ferroelectric capacitor structures, thereby resolving the contradiction between stability and thermal processing requirements.
3Reliability
If TiN conductive material is used, then good electrical conductivity is achieved, but material selection is limited
Solution Approach 1:
The composite stack of non-ferroelectric metal oxides serves as a universal interface layer that is compatible with multiple conductive materials including but not limited to TiN. This multi-functional layer enables the use of various conductive materials with different properties, thereby increasing material selection flexibility while maintaining good electrical conductivity and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the non-volatility and reliability of memory storage by maintaining stable polarization states, improving the duty cycle performance and allowing for the use of alternative conductive materials beyond TiN, reducing thermal processing requirements and enhancing overall component performance.
Implementation Method 1
A composite stack comprising at least two different composition non-ferroelectric metal oxides is formed over the substrate. The composite stack has an overall conductivity of at least 1×102 Siemens/cm. The composite stack is used to render the non-ferroelectric metal oxide-comprising insulator material to be ferroelectric.
Implementation Method 2
A capacitor has two electrical conductors separated by electrically insulating material. Energy as an electric field may be electrostatically stored within such material. One type of capacitor is a ferroelectric capacitor which has ferroelectric material as at least part of the insulating material. Ferroelectric materials are characterized by having two stable polarized states.
Implementation Method 3
A field effect transistor comprises a pair of source/drain regions having a semiconductive channel there-between. A gate construction comprises ferroelectric gate insulator material and a conductive gate electrode. Application of a suitable voltage to the gate allows current to flow from one of the source/drain regions to the other through the channel region.
Data Source
AI summary
A method used in forming an electronic component comprising conductive material and ferroelectric material comprises forming a non-ferroelectric metal oxide-comprising insulator material over a substrate. A composite stack comprising at least two different composition non-ferroelectric metal oxides is formed over the substrate. The composite stack has an overall conductivity of at least 1×102 Siemens/cm. The composite stack is used to render the non-ferroelectric metal oxide-comprising insulator material to be ferroelectric. Conductive material is formed over the composite stack and the insulator material. Ferroelectric capacitors and ferroelectric field effect transistors independent of method of manufacture are also disclosed.