Solid-State Devices TRIZ Cases

A via hole and conductive polymer link the cathode to an auxiliary electrode, cutting second-electrode voltage drop and brightness nonuniformity.

UV-cured photosensitive insulator fixes self-assembled semiconductor LEDs to the substrate without pressure, preventing separation and damage.

A light-emitting layer overlaps the adjacent panel's non-display area to weaken splice joints and keep pixel spacing visually consistent.

Perpendicular assembly wiring in micro-LED pixels avoids overlap with TFT regions, reducing leakage, bright spots, and data signal distortion.

A spaced RGB LED chip layout with encapsulation and a shared lens improves light angle consistency, heat dissipation, and display life.

A shared bonding pad layout lets non-rectangular display units support varied tiling patterns while reducing circuit design variants and development effort.

Applying AC voltage to display electrodes uses positive dielectrophoresis to orient light-emitting elements and avoid reverse placement.

Quantum barrier layers isolate quantum well cells in micro-LED mesas to curb sidewall recombination and improve internal and external quantum efficiency.

A stacked cell-over-peripheral memory layout places inductors, resistors, and capacitors in unused chip area to boost bandwidth and speed.

Stacked transparent electrodes and via-linked active layers raise pixel density while preserving layout safety distance and panel yield.

A switch cell generates virtual power voltage so stacked interface modules wake together while cutting logic leakage in sleep mode.

Multiple light-emitting layers in a micro LED improve small-pitch light emission through strain relaxation, light extraction, and current spreading.

Stacked light-emitting mesas in series preserve emitting area as micro LED pitch shrinks, improving display efficiency and resolution.

A vertical micro LED structure places separate top and bottom contacts between pixel and common electrodes to cut contact resistance in high-resolution displays.

A through-base metal pattern links panel pads to a rear-bonded circuit board, shrinking bezel area and avoiding bending defects.

A silicide-nitride source stack removes intervening oxide to lower source resistance, sustain charge carriers, and cut 3D circuit power use.

A dual-red phosphor mix lifts LED R8 above 72 while preserving luminous intensity and reducing phosphor use versus conventional red phosphors.

Split upper and lower connection electrodes maintain micro LED bonding to pixel and common electrodes despite placement misalignment.

A layered conductive element combines electroluminescence and electrical connection to simplify display pad-line and chip-on-film integration.

A metal pattern links pad electrodes to the circuit board through a base-layer opening, avoiding non-display bending, defects, and extra bezel area.

Oppositely oriented light-emitting elements with a shared insulative film improve pixel light-source uniformity across different pixel designs.

A grounded shield layer between the conductor and die shunts parasitic noise, improving current sensor sensitivity and signal accuracy.

A third conductive layer adds a connection pattern through shared contact holes, removing extra mask steps and shortening display fabrication.

Embedded shields between detector substrates reduce radiation exposure to semiconductor dice, improving electronics durability in scanning systems.

Dual common voltage lines carry matched display and touch signals to suppress coupling disturbances and preserve touch accuracy and display quality.

Novel organometallic emitters suppress self-aggregation and improve energy transfer, boosting OLED efficiency, lifespan, and color purity.

By placing the data line near the underlay substrate, this array layout cuts pixel capacitance, power use, and shielding-layer complexity.

A shared light-emitting layer offset from conductive-layer edges cuts surface recombination carrier loss and improves micro-LED emission efficiency.

A release-layer transfer flow removes residual bonding under red micro LED elements, enabling smaller chips and lower-cost selective assembly.

A strain-relaxed mesa enables maskless Group III-nitride micro LED growth, reducing doping variation and mask contamination.

A packaged memory-logic layout couples DRAM and logic I/O pads directly to avoid voltage translation, easing the memory wall and improving bandwidth.

Tilted mesa sidewalls, a high-index surround, and reflective coatings improve micro-LED light extraction and beam shaping after alignment-free bonding.

By folding the display circuit onto a bent substrate that overlaps pixels, this case cuts non-display border area in compact screens.

A diode-string ESD path and power clamp cut I/O pad standby leakage while preserving ESD protection and uniform poly-pitch compatibility.

An intrinsic electric field and same-side charge storage/drain layout speed carrier transfer and improve fluorescence detection across many wells.

Dual impurity regions in a polycrystalline silicon transistor channel cut hysteresis and image retention in display backplanes.

Segmented common source regions in a 3D memory cell structure cut RC delay and capacitance while supporting higher storage density.

Sequential epitaxial growth forms RGB microLED pixels on one wafer, avoiding wafer stacking and reducing sidewall damage during etching.

A black-and-transparent dual molding stack with an anti-glare layer protects micro LEDs while limiting color shift and luminance loss.

Remote hydrogen radicals enable SiC film deposition with better step coverage and electrical properties while avoiding oxidation of exposed metal surfaces.

Series-parallel LED cell interconnection and current blocking layers lower current density, suppress droop, and improve luminous efficacy.

Vertical stacking of two light-emitting elements cuts sub-pixel area while easing alignment and improving light extraction and brightness.

Trench-segmented PIN diode regions cut carrier injection, disperse avalanche current, and widen reverse recovery operating margin.

Segmented insulating-layer openings raise conductive-ball contact frequency, reducing pad-to-chip connection defects in display assemblies.

Flow in a fluid layer moves dummy light emitting elements into alignment areas, where electric-field alignment improves display transfer yield.

Stepped openings in an insulating layer let a metal reflector improve LED electrical contact while boosting reflection efficiency and light output.

A protrusion-supported shallow contact hole stabilizes the second electrode connection and reduces crack risk in micro-LED displays.

An RC clamp splits the capacitor to the frontside and resistor to backside power rails, improving ESD discharge and core protection.

Additional edge seals and via bars close seal-ring gaps in hybrid-bonded semiconductor packages, improving bond completeness and blocking moisture ingress.

An array guide member and vibration alignment fit asymmetric micro LED elements into a pixel array for accurate, efficient mounting.

Quantum well intermixing and slotted antenna structures cut non-radiative recombination and improve μ-LED efficiency and lifespan.

Splitting touch signal lines into two control groups eases dense large-panel routing, preserves subpixel aperture ratio, and reduces short-circuit risk.

A 3D ferroelectric pillar capacitor uses a narrow U-shaped 1T-1C structure to cut switching voltage and power while increasing bit-cell density.

A balanced overlap of conductors and insulating films keeps wafer bonding strength uniform despite misalignment, reducing voids during thinning.

A rear silicon oxide layer offsets SiGe epitaxial stress in SOI imagers, preserving flatness for industrial handling and near-infrared absorption.

Conductive nanomaterial electrodeposition improves micro-LED lead contact with patterned electrodes, reducing lighting failures and stabilizing display panels.

Different sub-pixel optical path lengths enable full-color OLED output with fewer color-altering layers, lower power use, and simpler masking.

A rigid transparent base and inverted LED chip layout avoid warpage and side-edge traces, enabling narrow bezels and tighter display splicing.

A segmented serial-parallel pixel layout uses conductive bridges between electrodes to reduce off failures while improving light output efficiency.

A low-index light adjustment layer with through holes redirects large-angle OLED light out of the panel, improving extraction and lowering power use.

Dry etching a light-formed sacrificial pattern avoids heat deformation in sensor diffraction gratings, improving optical performance and distance accuracy.

Multi-layer stop layers enable one dry etch to form shallow and deep IC trenches, reducing stress while preserving lateral isolation.

By combining silicon and germanium photodetectors on one IC, this case expands visible and IR sensing while cutting module count and footprint.

A dried polyimide insulation layer bonds and aligns light emitting elements without separate adhesive, reducing bubbles and improving yield.

Separating the pixel electrode and data line into different layers reduces parasitic capacitance, improving signal transmission and lowering LCD power use.

A multilayer partition wall and light blocking layer contain quantum dot ink overflow, improving color purity and saturation in light-emitting displays.

Embedded wiring inside the semiconductor substrate cuts stress from interlayer films, preserving imaging quality without increasing IR drop.

External wire routing replaces through-electrodes in stacked chips, preserving second-chip integration, strength, and simpler fabrication.

An electrochromic filter region switches transmittance to boost low-light sensitivity while limiting bright-scene overexposure.

Optical sensing parallel to the bonding surface plus holder motion analysis reduces false separation-completion calls in substrate debonding.

Multiple laser-formed blisters tilt each element toward a capture layer, improving detachment and preventing return to the transfer substrate.

A thin translucent substrate, insulated electrode separation, and distributed layout reduce stress concentration while preserving luminous flux.

Grid trenches with conductive filling isolate SPAD pixels, suppress edge-triggered avalanches, and improve low-light single-photon detection.

A blue LED with red and green light-emitting layers simplifies panel manufacturing while improving display life, reliability, and cost.

Low-temperature GaN or ITO sealing protects the quantum dot layer from moisture, oxygen, and heat damage while improving LED consistency and life.

A drain-electrode extension supports the photosensitive layer, cutting sensor layers, alignment steps, and photomasks in display panels.

Recesses in the display substrate nest color-filter spacers to cut panel thickness while preserving top-emission light efficiency and aperture ratio.

A flat electrode composite film enables removable micro-LED transfer, cutting redundant pixel space while improving yield and packaging density.

A protection circuit on the stacked peripheral-circuit substrate blocks pad noise while preserving photoelectric area and image sensitivity.

Dual metal oxide light-shielding layers use destructive interference to cut ambient light and improve reflective display brightness.

Embedded modulation structures bend incident light inside photoelectric conversion units to improve long-wavelength signal quality without thicker sensors.

Lateral bonding joins RF transistor chiplets to CMOS host wafers, enabling bias control and temperature sensing with faster, lower-cost fabrication.

Specific host and block-layer energy matching reduces charge buildup, shifts recombination away from interfaces, and extends OLED service life.

Monolithic silicon IC and III-nitride integration cuts interconnection resistance and inductance to lower power use and speed switching.

Protective liners around light guides block corrosive reaction solutions from reaching circuitry while preserving compact, low-cost light detection.

A carrier blocking region in the channel suppresses off-state current and short-channel effects, improving threshold stability and subthreshold behavior.

Expanding the backlight emitting region beyond the display area reduces dark borders and improves brightness uniformity at the screen edges.

An integrated wafer-level LED package simplifies packaging while reducing light scattering and improving heat dissipation and current spreading.

Vertically stacked micro-LED layers and direct bonding enable full-color pixels with higher brightness, smaller footprint, and simpler fabrication.

A laterally extended light emitting layer reduces edge contact and surface recombination, improving carrier injection and micro-LED efficiency.

Pre-baking the resin antireflection layer cuts reflow outgassing, preserving cover glass transmittance and sensor optical performance.

A grounded two-part light-shielding layout covers the storage node and surrounds the shutter component to reduce parasitic light and image blur.

An opening in stress-inducing liners enables local high-pressure deuterium passivation to raise transistor threshold voltage without extra masks.

Segmented light-blocking walls between large and small pixels suppress light leakage and color mixture while supporting uniform wall-depth processing.

Spacers, a reflective sidewall, and a transparent conductive layer separate close P/N electrodes, boost upward light output, and enable LED pre-bond testing.

A reflective isolation pattern with dielectric and conductive layers suppresses dark current while boosting light reflection and sensor sensitivity.

A stepped gate end increases separation from the drain or source region to ease electric field concentration and suppress white-spot image defects.

Multi-dopant oxide fluorescence broadens red-to-near-infrared emission, improving tissue penetration and supporting plant growth lighting.

An offset region and full gate-insulator coverage stabilize oxide TFT electrical behavior while preserving mobility and limiting leakage current.