Micro-LED Pixel Wiring Layout to Prevent TFT Crosstalk

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Solution Overview

Problem

In display devices using semiconductor light emitting elements, crosstalk effects between assembly wiring and thin film transistors in pixels can occur, leading to bright spot defects and distortion of drive signals.

Innovation Solution

The display device incorporates a substrate with pixel regions that include light emitting regions and pixel transistor regions, along with an assembly wiring layer where assembly wirings are arranged perpendicular to the pixel transistor regions, preventing overlap and crosstalk.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If assembly wiring is provided in a pixel for self-assembly of light emitting elements, then ease of manufacture is improved, but crosstalk effect between assembly wiring and thin film transistor occurs causing bright spot defects

Engineering Contradiction:
Improveself-assembly capabilityVSAvoidbrightness uniformity
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent resolves the crosstalk problem by changing the spatial arrangement from overlapping (2D plane conflict) to perpendicular (3D spatial separation). The pixel transistor region is configured in a first direction while the assembly wiring is arranged in a second direction perpendicular to the first direction, eliminating overlap and preventing capacitive coupling between the wiring and transistor, thus avoiding bright spot defects while maintaining self-assembly capability

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of operation

If assembly wiring passes through pixel transistor region, then ease of operation is improved, but current leakage occurs through activated active region causing signal distortion

Engineering Contradiction:
Improvewiring accessibilityVSAvoiddata signal integrity
Core Design Contradiction:
Ease of operationVSLoss of information

Solution Approach 1:

The patent extracts the harmful interaction by separating the assembly wiring from the pixel transistor region. The wiring is taken out of the transistor's active area and repositioned in a perpendicular direction, preventing the wiring from activating the active region and forming unwanted current paths that would distort data signals

Inventive Principle:
Principle #2Taking out (Extraction)

3Device complexity

If overlap region is formed between assembly wiring and pixel transistor, then device complexity is reduced, but transistor characteristic curve shifts negatively causing bright spot errors

Engineering Contradiction:
Improvewiring layout simplicityVSAvoidtransistor characteristic accuracy
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent maintains wiring layout simplicity while eliminating the harmful overlap effect by transitioning to a perpendicular arrangement in three-dimensional space. This dimensional change allows the assembly wiring to remain accessible for self-assembly operations without forming overlap regions that would create capacitive effects and shift transistor characteristic curves

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS12324287B2Display apparatus using semiconductor light emitting device
Publication Date: 2025.06.03 LG ELECTRONICS INC
  • US12324287B2 patent drawing
  • US12324287B2 patent drawing
  • US12324287B2 patent drawing

AI summary

The present disclosure is applicable to a display apparatus-related technology field, and relates to, for example, a display apparatus using a micro light emitting diode (LED), which is a semiconductor light emitting device. The present invention provides a display apparatus using a light emitting device operated in an active matrix scheme, the display apparatus comprising: a substrate; a pixel area layer configuring multiple pixel areas, which are arranged on the substrate and each of which includes a light emitting area and a pixel transistor area; and an assembly wiring layer including multiple pairs of assembly wires arranged between the substrate and the pixel area layer, wherein each of the pixel areas may include a light emitting area in which a light emitting device is mounted, and a pixel transistor area, which is positioned in a first direction with respect to the light emitting area and in which a thin film transistor for lighting the light emitting device is disposed, and the assembly wires may be arranged in a second direction different from the first direction.