Multi-Band Light Sensor IC Using Silicon and Germanium Subpixels
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional light sensor modules are limited to sensing specific wavelength bands due to the use of different semiconductor materials, requiring multiple modules or ICs for multi-wavelength sensing, which increases cost and physical footprint.
Innovation Solution
A multiple wavelength band light sensor IC is developed, integrating multiple semiconductor materials into a single substrate, allowing a single module with a single lens assembly and supporting electronics to sense visible and infrared light, including short-wavelength IR, by using separate subpixels and photodetectors optimized for each wavelength band.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor materials are used for different wavelength bands, then sensing capability for multiple wavelength bands is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent combines multiple semiconductor materials (silicon and germanium) into a single integrated light sensor device, merging the functionality of separate visible light and infrared sensors into one unified device. This reduces the number of discrete components while maintaining multi-wavelength sensing capability.
Solution Approach 2:
The integrated light sensor device is designed to perform multiple functions by detecting both visible light and infrared radiation simultaneously. The device universally handles different wavelength bands through its multi-material structure, eliminating the need for separate specialized sensors.
2Adaptability or versatility
If multiple light sensor modules or ICs are used for multi-wavelength sensing, then sensing coverage is improved, but cost and physical footprint increase
Solution Approach 1:
The patent merges multiple light sensor modules into a single integrated IC device that can detect both visible and infrared wavelengths. This consolidation reduces the physical footprint by eliminating the need for separate modules while maintaining comprehensive sensing coverage.
Solution Approach 2:
The integrated light sensor IC provides universal sensing coverage across multiple wavelength bands, replacing the need for multiple specialized modules. This multi-functional approach reduces the overall device area while maintaining broad spectral detection capability.
3Adaptability or versatility
If multiple light sensor modules or ICs are used for multi-wavelength sensing, then sensing coverage is improved, but manufacturing cost increases
Solution Approach 1:
The patent combines multiple light sensor functionalities into a single integrated IC, reducing the total number of components that need to be manufactured, assembled, and tested. This consolidation lowers manufacturing costs by simplifying the production process and reducing material requirements.
Solution Approach 2:
The integrated light sensor IC provides universal multi-wavelength detection capability in a single device, eliminating the need to manufacture and stock multiple separate modules. This reduces inventory costs, assembly complexity, and overall manufacturing expenses while maintaining comprehensive sensing coverage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables efficient sensing of multiple wavelength bands with reduced costs and physical footprint, improving the capability of light sensor modules to capture a broader spectrum of light without the need for multiple modules or ICs.
Implementation Method 1
a plurality of first light-absorption regions and a plurality of second light-absorption regions in the semiconductor substrate. Each of the first light-absorption regions includes an implantation region of the semiconductor substrate. The implantation region and the semiconductor substrate form at least a portion of a corresponding one of a plurality of first photodetectors for a first light wavelength band. Each of the second light-absorption regions includes a semiconductor material different from the semiconductor substrate. The semiconductor material forms at least a portion of a corresponding one of a plurality of second photodetectors for a second light wavelength band different from the first light wavelength band.
Data Source
AI summary
Some embodiments relate to an integrated circuit light sensor device. The integrated circuit light sensor device includes a semiconductor substrate, as well as a plurality of first light-absorption regions and a plurality of second light-absorption regions located in the semiconductor substrate. Each of the first light-absorption regions includes an implantation region of the semiconductor substrate. The implantation region and the semiconductor substrate form at least a portion of a corresponding one of a plurality of first photodetectors for a first light wavelength band. Each of the second light-absorption regions includes a semiconductor material different from the semiconductor substrate. The semiconductor material forms at least a portion of a corresponding one of a plurality of second photodetectors for a second light wavelength band different from the first light wavelength band.


