Micro LED Red Epitaxial Transfer Without Residual Bonding Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing methods for manufacturing display devices using semiconductor light emitting elements face challenges, particularly with the red semiconductor light emitting elements, due to the residual bonding layer which limits miniaturization and requires complex transfer processes.
Innovation Solution
A method for manufacturing a display device using a semiconductor light emitting element involves forming an epitaxial layer on a growth substrate, transferring it to a temporary substrate, forming a release layer, and then transferring it again to another temporary substrate for etching and separation, thereby eliminating the residual bonding layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If red semiconductor light emitting elements are transferred using a bonding layer on a temporary substrate, then selective transfer is enabled, but residual bonding layer remains under the element limiting miniaturization
Solution Approach 1:
The patent applies preliminary action by forming a release layer between the bonding layer and the semiconductor light emitting element before the transfer process. This release layer is specifically designed to be removed after transfer, ensuring no residual bonding layer remains under the element. The release layer acts as a sacrificial intermediate layer that enables clean separation and prevents miniaturization limitations.
Solution Approach 2:
The patent extracts the harmful bonding layer from the final structure by introducing a release layer that allows the bonding layer to be completely removed after transfer. The release layer enables the bonding layer to serve its temporary purpose during transfer, then be cleanly separated and discarded, leaving no residue that would limit element size reduction.
2Ease of operation
If multiple transfer processes are used for red semiconductor light emitting elements, then selective transfer is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent introduces a release layer as an intermediary between the bonding layer and the semiconductor light emitting element. This intermediary layer simplifies the overall process by enabling clean separation and removal of the bonding layer after transfer, eliminating the need for complex post-transfer cleaning operations and reducing manufacturing complexity.
Solution Approach 2:
The release layer is formed in advance before the transfer process, preliminarily preparing the structure for clean separation. This preliminary action prevents residual bonding layer formation and simplifies subsequent processing steps, reducing overall manufacturing complexity.
3Productivity
If element size is reduced to increase quantity on substrate, then manufacturing cost decreases, but residual bonding layer prevents further miniaturization
Solution Approach 1:
The patent extracts the residual bonding layer that prevents miniaturization by using a release layer that enables complete removal of the bonding layer after transfer. This extraction of the harmful residue allows elements to be miniaturized further, increasing the number of elements that can be produced on a given substrate area.
Solution Approach 2:
The release layer is preliminarily formed to enable clean removal of the bonding layer, allowing elements to be reduced to smaller sizes without being constrained by residual bonding material. This preliminary preparation facilitates aggressive miniaturization for higher productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the selective transfer of red semiconductor light emitting elements without residual bonding layers, enabling miniaturization and reducing manufacturing costs, while also improving light extraction efficiency with a metal release layer.
Implementation Method 1
When a metal layer is used as the release layer, the release layer may be removed through laser irradiation
Implementation Method 2
When a metal layer is used as the release layer, it may serve as a reflective layer, thereby improving light extraction efficiency of the semiconductor light emitting element
Data Source
AI summary
The present specification provides a red semiconductor light emitting element having no residual bonding layer when a semiconductor light emitting element is selectively transferred or assembled, and a method for manufacturing a display apparatus using same. The method for manufacturing the display apparatus according to an embodiment of the present disclosure comprises the steps of: forming an epitaxial layer for implementing a red semiconductor light emitting element on a growth substrate; transferring the epitaxial layer on the growth substrate onto a first temporary substrate; forming a release layer on the epitaxial layer which has been transferred onto the first temporary substrate; transferring the epitaxial layer, on which the release layer has been formed, onto a second temporary substrate; manufacturing an individual semiconductor light emitting element by etching the epitaxial layer transferred on the second temporary substrate; and separating the semiconductor light emitting element from the second temporary substrate.