μ-LED Quantum Well Intermixing for Low Recombination Loss
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current μ-LED technologies face challenges in achieving high directionality and reducing non-radiative recombination, leading to inefficiencies in light emission and short lifespan, especially in small-scale applications like augmented reality and automotive displays.
Innovation Solution
The use of slotted antenna structures and quantum well intermixing techniques to enhance radiative recombination and reduce non-radiative recombination, combined with specific doping processes and annealing steps, to improve the efficiency and longevity of μ-LEDs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional μ-LED structures are used, then manufacturing is simpler, but light emission efficiency is low due to high non-radiative recombination
Solution Approach 1:
The patent applies local quality by creating a quantum well intermixing region specifically at the edges of the active layer, while the center region maintains its original structure. This localized modification reduces non-radiative recombination at edge defects without requiring complete structural redesign of the entire μ-LED
Solution Approach 2:
The patent uses composite material structures by combining different semiconductor materials (e.g., AlGaInP layers with different aluminum compositions) to form the quantum well and barrier layers. The quantum well intermixing region creates a composite structure that optimizes both radiative recombination and defect reduction
2Area of moving object
If μ-LED size is reduced for AR applications, then display resolution improves, but directionality and lifespan deteriorate
Solution Approach 1:
The patent changes physical parameters by controlling the aluminum composition gradient in the quantum well layers and adjusting the thickness of each layer to optimize light emission directionality. The quantum well intermixing depth and profile are precisely controlled to maintain performance in miniaturized devices
Solution Approach 2:
The patent addresses directionality issues in miniaturized μ-LEDs by introducing vertical layering with quantum wells at specific depths within the active region. This vertical dimension allows control of light emission characteristics independent of the reduced horizontal device dimensions
3Productivity
If quantum well intermixing is increased to reduce non-radiative recombination, then light emission efficiency improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies preliminary action by forming the quantum well structure with predetermined composition gradients before the intermixing process. The barrier layers are pre-configured with specific aluminum compositions that control the intermixing extent, ensuring consistent results without requiring complex real-time control during manufacturing
Solution Approach 2:
The quantum well intermixing process is designed to be self-limited by the barrier layer compositions. The intermixing naturally stops when it encounters the higher aluminum composition barrier layers, eliminating the need for precise control of intermixing depth and reducing manufacturing complexity
4Power
If doping concentration is increased to improve electrical conductivity, then current flow improves, but non-radiative recombination increases
Solution Approach 1:
The patent applies local quality by concentrating doping in specific regions (contact layers and transport layers) while keeping the quantum well active region lightly doped. This localized doping strategy ensures good electrical conductivity for current injection while minimizing non-radiative recombination in the light-emitting zone
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in improved light emission efficiency, extended lifespan, and enhanced performance under high current densities, addressing the limitations of existing μ-LED technologies.
Implementation Method 1
enhance radiative recombination and reduce non-radiative recombination
Implementation Method 2
quantum well intermixing techniques to enhance radiative recombination and reduce non-radiative recombination
Implementation Method 3
A cavity is located within the electrically conductive structure. The cavity has a width and a specific length on which the wavelength of the light generated by the device depends
Data Source
AI summary
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.