Integrated Image Sensor Layout for High-SNR Parallel Fluorescence Detection
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Solution Overview
Problem
Existing instruments for massively-parallel sample analyses are limited by their large size, lack of portability, requirement of skilled technicians, high power needs, and high costs, making them unsuitable for point-of-care genetic sequencing and personalized medicine applications.
Innovation Solution
An integrated circuit with a photodetection region configured to induce an intrinsic electric field, coupled with charge storage and drain regions, enhances the transfer rate of charge carriers and improves the signal-to-noise ratio by reducing noise charge carriers and increasing the rejection ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional photodetector arrays are used for massively-parallel sample analysis, then detection capability is achieved, but device size and complexity increase significantly
Solution Approach 1:
The patent combines multiple photodetector pixels into a single integrated circuit substrate, merging detection functions that would traditionally require separate components into one compact unit. This integration maintains the massively-parallel detection capability while significantly reducing the overall device size and structural complexity.
Solution Approach 2:
The integrated circuit performs multiple functions within a single device: it simultaneously detects fluorescent emissions from tens of thousands of sample wells, processes electrical signals from multiple pixels, and provides portable analysis capability. This multi-functionality eliminates the need for separate external optical components and skilled operators.
2Measurement precision
If external optical components are used for fluorescent detection, then detection accuracy is improved, but device portability and ease of operation deteriorate
Solution Approach 1:
The patent integrates optical detection functions directly into the photodetector pixels on the integrated circuit substrate, combining what would traditionally be separate external optical components into a single portable device. This maintains detection accuracy while enabling portability and reducing the need for skilled operators.
3Speed
If photodetection region induces intrinsic electric field towards drain region, then charge carrier transfer rate increases, but noise charge carriers may increase
Solution Approach 1:
The patent positions the charge storage region and drain region on the same side of the photodetection region, creating a localized electric field configuration. This local arrangement optimizes the electric field direction to efficiently collect charge carriers while minimizing the generation and impact of noise charge carriers in specific regions of the detector.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated circuit enables efficient detection of fluorescent emissions from tens of thousands of sample wells simultaneously, improving the accuracy and speed of sample analysis while reducing the need for external optical components and skilled operators.
Implementation Method 1
a photodetection region configured to receive incident light
Implementation Method 2
the photodetection region is configured to induce an intrinsic electric field in a direction from the photodetection region to the one or more drain regions
Data Source
AI summary
Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a photodetection region and a drain region electrically coupled to the photodetection region, and the photodetection region may be configured to induce an intrinsic electric field in a direction from the photodetection region to the drain region(s). In some embodiments, a charge storage region and the drain region may be positioned on a same side of the photodetection region. In some embodiments, at least one drain layer may be configured to receive incident photons and/or charge carriers via the photodetection region. In some embodiments, an integrated circuit may comprise a plurality of pixels and a control circuit configured to control a transfer of charge carriers in the plurality of pixels.