Laser Blister Transfer for Reliable Element Detachment
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Solution Overview
Problem
Existing element transfer devices face challenges in reliably detaching elements from transfer substrates due to strong adhesive forces, leading to elements not being transferred to receiving substrates, especially when blisters are generated during laser irradiation.
Innovation Solution
A transfer device and method that utilize an energy irradiation unit to form blisters on the transfer substrate, changing the tilt of the element and bringing it closer to the receiving substrate's capture layer, allowing for reliable detachment and transfer by forming blisters of varying volumes and connecting them to enhance the transfer process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If laser irradiation is applied to generate a blister in the blistering layer, then the element is pushed out and separated from the transfer substrate, but the contact area between the blistering layer and element remains large causing adhesive force to be stronger than separation force
Solution Approach 1:
The patent divides the blistering layer into multiple independent blister regions (first blister and second blister) within the element holding area. This segmentation reduces the continuous contact area between the blistering layer and element, thereby reducing the total adhesive force while maintaining reliable detachment
Solution Approach 2:
The patent creates localized blister regions with specific volumes and positions (different heights from the transfer substrate) to selectively reduce adhesive force in critical areas. The first blister has a larger volume than the second blister, creating different local detachment characteristics that work together to overcome the overall adhesive force
2Reliability
If a single blister is generated by laser irradiation, then some separation force is achieved, but the element may not detach completely and may return to the transfer substrate as the blister shrinks
Solution Approach 1:
The patent uses multiple blisters (first blister and second blister) with different volumes and positions to create a progressive detachment mechanism. This ensures the element is pushed out reliably and maintains contact with the capture layer, preventing return to the transfer substrate
Solution Approach 2:
The patent introduces a capture layer on the receiving substrate as an intermediary that captures the element during the transfer process. This capture layer ensures the element maintains contact during the blister shrinkage phase, preventing the element from returning to the transfer substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution ensures reliable transfer of elements from the transfer substrate to the receiving substrate by altering the element's tilt and adhesive forces, reducing the risk of elements returning to the transfer substrate and improving transfer accuracy and efficiency.
Implementation Method 1
a laser beam is irradiated on a blistering layer that is provided on a transfer substrate and that has an adhesive layer on the front surface side, to generate a blister (bulge) in the blistering layer
Implementation Method 2
laser is irradiated on a bonding surface of a chip bonded to a transfer substrate to cause ablation, which causes the chip to detach from the transfer substrate
Data Source
AI summary
A transfer device transfers an element held on a transfer substrate to a receiving substrate. The transfer device comprises an energy irradiation unit irradiating an active energy ray toward the element through the transfer substrate in a state in which the transfer substrate and the receiving substrate face each other across the element. The transfer substrate has a blistering layer in which a blister is generated due to irradiation of an active energy ray. The receiving substrate has a capture layer that is arranged facing the transfer substrate. The energy irradiation unit forms the blister in an element holding area to change a tilt of the element relative to the transfer substrate and to bring the element closer to the receiving substrate, thereby causing the a portion of the element to come in contact with the capture layer first, in a state in which the blistering layer holds the element.