Oxide-Free Multilayer Source-Channel Interface in 3D Circuits

Solution Overview

Problem

Traditional 3D circuit devices face challenges in achieving low resistance sources that also act as effective reservoirs for charge carriers, leading to performance limitations and high power consumption.

Innovation Solution

A multilayer source is developed, comprising a metal silicide layer on a substrate and a metal nitride layer between the silicide and the channel, processed without an intervening oxide layer, which provides low resistance and a good reservoir for charge carriers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a traditional source layer is used to electrically connect to the channel, then the source can provide charge carriers to the channel, but the source exhibits high resistance which limits operational frequency and increases power consumption

Engineering Contradiction:

Improvecharge carrier reservoir capabilityVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSPower

Solution Approach 1:

The source is constructed as a composite structure with a first source layer comprising metal silicide and a second source layer comprising metal nitride. This composite material approach combines the low resistance properties of metal silicide with the appropriate charge carrier reservoir characteristics of metal nitride, achieving both low resistance and effective charge carrier supply to the channel.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The invention changes the material parameters of the source by transitioning from traditional single-material sources to a two-layer composite source with specific material compositions. The first source layer uses metal silicide with low resistivity, while the second source layer uses metal nitride with appropriate electronic properties, thereby optimizing both resistance and charge carrier reservoir capabilities.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If a traditional source layer is used to electrically connect to the channel, then the source can provide charge carriers to the channel, but the source exhibits high resistance which limits operational frequency

Engineering Contradiction:

Improvecharge carrier reservoir capabilityVSAvoidoperational frequency

Core Design Contradiction:

ReliabilityVSSpeed

Solution Approach 1:

The source is constructed as a composite structure with a first source layer comprising metal silicide and a second source layer comprising metal nitride. This composite material approach combines the low resistance properties of metal silicide with the appropriate charge carrier reservoir characteristics of metal nitride, achieving both low resistance and effective charge carrier supply to the channel.

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The invention changes the material parameters of the source by transitioning from traditional single-material sources to a two-layer composite source with specific material compositions. The first source layer uses metal silicide with low resistivity, while the second source layer uses metal nitride with appropriate electronic properties, thereby optimizing both resistance and charge carrier reservoir capabilities.

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentEP3198653B1Improved source-channel interaction in a 3D circuit

Publication Date: 2025.05.14 INTEL NDTM US LLC

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Figure 3A~3B

AI summary

A multilayer source provides charge carriers to a multitier channel connector. The source includes a metal silicide layer on a substrate and a metal nitride layer between the metal silicide layer and the channel. The metal silicide and the metal nitride are processed without an intervening oxide layer between them. In one embodiment, the source further includes a silicon layer between the metal nitride layer and the channel. The silicon layer can also be processed without an intervening oxide layer. Thus, the source does not have an intervening oxide layer from the substrate to the channel.