Ferroelectric Majority-Gate Multiplier for Low-Power Logic

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Solution Overview

Problem

Existing multiplier cells in CMOS logic require a large number of transistors, leading to high power consumption and area usage, which is a challenge in the pursuit of lower power consumption and efficient battery operation.

Innovation Solution

Implementing multiplier cells using non-linear polar materials such as ferroelectric or paraelectric materials in logic gates, specifically majority and minority gates, reduces the need for switching transistors and minimizes interconnect routings, resulting in compact and low-power circuitry.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If traditional CMOS logic gates (AND, OR, XOR) are used in multiplier cells, then the circuit can perform multiplication operations, but the number of transistors increases leading to high power consumption and large area usage

Engineering Contradiction:
Improvepower consumptionVSAvoidnumber of transistors
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The patent changes the fundamental operating parameter of logic gates from voltage-based CMOS switching to charge-based majority/minority gate operation. By using capacitive nodes to store charge representing logic states and employing charge redistribution mechanisms, the circuit achieves logic operations with significantly fewer transistors and lower power consumption compared to traditional voltage-switching CMOS gates.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent replaces the mechanical switching mechanism of CMOS transistors (gate voltage controlling channel conduction) with an electrostatic charge redistribution mechanism. Majority and minority gates use capacitive coupling and charge sharing among nodes to perform logic operations, eliminating the need for complex CMOS transistor networks and reducing both transistor count and power consumption.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Area of stationary object

If traditional CMOS logic gates are used in multiplier cells, then the circuit can perform multiplication operations, but the area usage increases due to the large number of transistors required

Engineering Contradiction:
Improvearea usageVSAvoidnumber of transistors
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent merges multiple logic functions into unified majority and minority gate structures. A single majority gate can perform AND, OR, and other logic operations by adjusting its inputs, and similarly for minority gates. This functional merging reduces the total number of separate gate circuits needed in multiplier cells, thereby reducing area usage while maintaining computational capability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent implements universal logic gates (majority and minority gates) that can perform multiple logic operations depending on their input configuration. These gates serve as building blocks for various arithmetic operations including multiplication, addition, and logic functions, reducing the need for specialized circuits and minimizing overall area requirements for complex arithmetic units.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Use of energy by moving object

If the number of transistors is reduced to lower power consumption, then battery efficiency improves, but the ability to perform complex multiplication operations may be compromised

Engineering Contradiction:
Improvepower consumptionVSAvoidmultiplication operation capability
Core Design Contradiction:
Use of energy by moving objectVSProductivity

Solution Approach 1:

The patent segments complex multiplication operations into a series of simpler majority and minority gate operations. By breaking down multiplication into partial product generation using majority/minority gates followed by accumulation stages, the circuit achieves complex computational functionality using only simple, low-transistor-count gate structures, thereby maintaining productivity while reducing power consumption.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from two-dimensional CMOS transistor switching to a three-dimensional charge redistribution model involving multiple capacitive nodes and charge sharing paths. This dimensional change enables complex arithmetic operations to be performed through charge manipulation rather than voltage switching, achieving higher computational density with fewer transistors and lower power consumption.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of non-linear polar materials in logic gates significantly reduces power consumption and allows for high-density packing of logic gates, enabling low-voltage operation and efficient data retention in processors.

Implementation Method 1

The use of non-linear polar materials such as ferroelectric or paraelectric materials in logic gates

Methodology Applied
Scientific EffectFerroelectric polarization:

Implementation Method 2

The use of non-linear polar materials such as ferroelectric or paraelectric materials in logic gates

Methodology Applied
Scientific EffectParaelectric polarization:

Implementation Method 3

The use of non-linear polar materials such as ferroelectric or paraelectric materials in logic gates, specifically majority and minority gates, reduces the need for switching transistors

Methodology Applied
Scientific EffectNon-linear capacitance:

Data Source

PatentUS12524204B1Ferroelectric or paraelectric based low power multiplier
Publication Date: 2026.01.13 KEPLER COMPUTING INC
  • US12524204B1 patent drawing
  • US12524204B1 patent drawing
  • US12524204B1 patent drawing

AI summary

A low power adder uses a non-linear polar capacitor to retain charge with fewer transistors than traditional CMOS sequential circuits. The non-linear polar capacitor includes ferroelectric material, paraelectric material, or non-linear dielectric. The adder may include minority gates and/or majority gates. Input signals are received by respective terminals of capacitors having non-linear polar material. The other terminals of these capacitors are coupled to a node where the majority function takes place for the inputs.