Ferroelectric Memory Circuit Initialization Using In-Phase AC Bit Lines

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Solution Overview

Problem

Existing semiconductor circuits with ferroelectric capacitors face challenges in performing initialization operations quickly and efficiently, which are necessary to improve ferroelectric characteristics and ensure stable data storage.

Innovation Solution

A semiconductor circuit design incorporating first and second inverters, storage circuits, power supply switches, and transistors, with specific driving operations to apply alternating-current signals to bit lines, enabling rapid initialization of ferroelectric storage elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an initialization operation is performed on ferroelectric storage elements, then ferroelectric characteristics are improved and stable data storage is achieved, but the operation time increases

Engineering Contradiction:
Improveferroelectric characteristicsVSAvoidinitialization operation time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies periodic alternating-current signals to the bit lines during initialization operation. By using periodic AC signals instead of continuous signals, the ferroelectric capacitor is subjected to repeated polarization switching cycles that effectively improve ferroelectric characteristics while maintaining reasonable operation time. The periodic nature of the signals enables efficient initialization without requiring excessively long durations.

Inventive Principle:
Principle #19Periodic action

2Use of energy by moving object

If power supply is stopped to reduce power consumption, then power gating is achieved, but the circuit cannot perform normal operations

Engineering Contradiction:
Improvepower consumptionVSAvoidcircuit operation capability
Core Design Contradiction:
Use of energy by moving objectVSEase of operation

Solution Approach 1:

The patent performs preliminary data transfer from the volatile SRAM to the nonvolatile ferroelectric storage elements before stopping power supply. This preliminary action ensures that critical data is preserved in the nonvolatile memory, allowing the circuit to be powered down for energy savings while maintaining data availability for future operations. When power is restored, the circuit can quickly resume operations using the preserved data.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design allows for rapid improvement of ferroelectric characteristics, enabling stable data storage and quick restoration of operation states after power resumption, reducing power consumption through power gating.

Implementation Method 1

a nonvolatile storage element using a ferroelectric capacitor

Methodology Applied
Scientific EffectFerroelectricity:

Implementation Method 2

an initialization operation is performed in which an alternating-current signal is applied to the storage element before shipment. Ferroelectric characteristics of the storage element are improved by the initialization operation

Methodology Applied
Scientific EffectFerroelectric polarization:

Data Source

PatentUS12537056B2Semiconductor circuit, driving method, and electronic apparatus
Publication Date: 2026.01.27 SONY SEMICON SOLUTIONS CORP
  • US12537056B2 patent drawing
  • US12537056B2 patent drawing
  • US12537056B2 patent drawing

AI summary

A semiconductor circuit according to the present disclosure includes: first and second inverters coupled to first and second power supply nodes, a first control line, a first storage circuit, first and second power supply switches, first and second bit lines, a first word line, first and second transistors each having a gate coupled to the first word line, and a driving section that is configured to perform a first driving operation and a second driving operation. In the first driving operation, in a period in which the first and second power supply switches are turned on, the first word line is set active, and signals having logic levels different from each other are applied to the respective first and second bit lines. In the second driving operation, in a period in which the first and second power supply switches are turned off, the first word line is set active, and a first alternating-current signal and a second alternating-current signal are respectively applied to the first and second bit lines. The first alternating-current signal and the second alternating-current signal are signals in phase with each other.