Ferroelectric Memory Cell Sharing Recessed Capacitor Structure
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Solution Overview
Problem
The existing semiconductor storage devices, such as those disclosed in Patent Document 1, have capacitors made from metal/ferroelectrics/metal, which occupy a large area, making them unsuitable for miniaturization and high integration of memory cells.
Innovation Solution
A semiconductor storage device with a recessed portion in a semiconductor substrate, a ferroelectric film along the inner side of the recessed portion, an electrode embedded within the recessed portion, a first conductivity-type separation region under the recessed portion, and a second conductivity-type electrode region on at least one side, allowing adjacent memory cells to share the recessed portion and reducing the area occupied by each memory cell.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a capacitor made from metal/ferroelectrics/metal is formed for each memory cell, then the memory cell can store information reliably, but the area occupied by each memory cell becomes large
Solution Approach 1:
Adjacent memory cells share a common recessed portion containing the ferroelectric capacitor structure. The capacitor electrode and ferroelectric film are formed in a shared recessed region, allowing multiple memory cells to utilize the same physical space for storage functionality, thereby reducing the area per memory cell while maintaining reliable information storage
Solution Approach 2:
The capacitor structure transitions from a planar configuration to a three-dimensional recessed portion embedded in the semiconductor substrate. By utilizing vertical depth rather than only horizontal area, the invention achieves higher integration density while preserving the capacitor's electrical performance and storage reliability
2Area of moving object
If the memory cell structure is miniaturized for high integration, then the device complexity increases and manufacturing becomes more difficult
Solution Approach 1:
The memory cell is divided into distinct functional regions: a shared recessed portion containing the ferroelectric capacitor, separation regions for electrical isolation, and electrode regions for signal connection. This segmentation allows each component to be optimized independently while maintaining overall simplicity and manufacturability in miniaturized configurations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables further reduction in the area occupied by a single memory cell, facilitating miniaturization and high integration of memory cells in semiconductor storage devices.
Implementation Method 1
a semiconductor storage device that stores information by using a remanent polarization direction of ferroelectrics
Data Source
AI summary
Provided is a semiconductor storage device and an electronic apparatus having a structure that is more suitable for miniaturization and high integration of memory cells. A semiconductor storage device includes: a recessed portion provided in a semiconductor substrate; a ferroelectric film provided along an inner side of the recessed portion; an electrode provided on the ferroelectric film so as to be embedded in the recessed portion; a first conductivity-type separation region provided in the semiconductor substrate under the recessed portion; and a second conductivity-type electrode region provided in the semiconductor substrate on at least one side of the recessed portion.