Ferroelectric Memory Cell Structure for Stable 3D Integration
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Solution Overview
Problem
Current nonvolatile memory devices face challenges in maintaining structural stability and reliability as integration increases, particularly in ensuring effective signal storage and retrieval using ferroelectric layers, which require innovative structural configurations to enhance performance.
Innovation Solution
The nonvolatile memory device incorporates a substrate with source and drain electrode structures, channel structures, and ferroelectric layers arranged in specific configurations to allow for efficient signal storage and retrieval, utilizing ferroelectric materials with remanent polarization for storing information and interfacial insulation to prevent interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a ferroelectric layer is used for nonvolatile memory storage, then signal information can be stored in a nonvolatile manner using remanent polarization, but the device requires complex multi-layer electrode and insulation structures to ensure proper function and prevent interference
Solution Approach 1:
The patent implements a nested structure where the channel structure is surrounded by the ferroelectric layer, which in turn is surrounded by the gate electrode structure. Additional nested layers include interfacial insulation structures and block insulation structures, creating concentric rings of functional layers that maximize space utilization while maintaining clear functional separation between components
Solution Approach 2:
The device is segmented into multiple distinct functional layers including the channel structure, ferroelectric layer, interfacial insulation structures, block insulation structures, and gate electrode structure. Each layer is independently formed and optimized for its specific function, allowing for modular fabrication and independent optimization of each component's properties
2Productivity
If multiple electrode structures are stacked to increase integration, then device functionality and storage capacity improve, but structural stability becomes more difficult to maintain
Solution Approach 1:
The patent employs thin film structures for the ferroelectric layer and interfacial insulation structures that conform to the underlying channel structure geometry. These thin film layers provide mechanical flexibility and stress distribution, preventing structural failure while maintaining the integrity of the multi-layer stacked configuration
Solution Approach 2:
Interfacial insulation structures are positioned between the channel structure and ferroelectric layer, and between the ferroelectric layer and gate electrode structure, to prevent direct contact and potential structural degradation. These cushioning layers are formed beforehand to protect the interface regions from stress and degradation during device operation and fabrication processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables reliable and efficient storage and retrieval of signal information by leveraging the remanent polarization of ferroelectric materials, improving the structural stability and integration reliability of nonvolatile memory devices.
Implementation Method 1
The ferroelectric memory device can store any one of remanent polarization having different sizes and orientations as signal information in a gate ferroelectric layer in a nonvolatile manner
Implementation Method 2
the signal information can be read out by using a feature in which the magnitude of the operation current flowing through a channel layer between source and drain electrodes changes according to the stored remanent polarization
Data Source
AI summary
A nonvolatile memory device according to an embodiment includes a substrate having an upper surface, a source electrode structure disposed on the substrate, and a channel structure disposed over the substrate and disposed to contact one sidewall surface of the source electrode structure. In addition, the nonvolatile memory device includes a drain electrode structure disposed to contact one sidewall surface of the channel structure over the substrate. In addition, the nonvolatile memory device includes a plurality of ferroelectric structures extending in a first direction perpendicular to the substrate in the channel structure and disposed to be spaced apart from each other along the second direction perpendicular to the first direction. In addition, the nonvolatile memory device includes a gate electrode structure disposed in each of the plurality of ferroelectric structure to extend along the first direction.