Ferroelectric Memory Local Plate Driving for Disturbance Control
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Solution Overview
Problem
Existing nonvolatile memory devices face challenges in maintaining data reliability and reducing power consumption due to disturbances in unselected ferroelectric cell capacitors during read/write operations.
Innovation Solution
The nonvolatile memory device employs a dual local plate line driver system, where separate local plate line drivers are used for selected and unselected memory cells, applying distinct voltages to minimize charge disturbance in unselected ferroelectric cell capacitors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single local plate line driver is used for all memory cells, then device complexity is reduced, but charge disturbance occurs in unselected ferroelectric cell capacitors leading to data reliability degradation
Solution Approach 1:
The local plate line driver system is segmented into multiple independent drivers (first local plate line driver and second local plate line driver), each responsible for specific groups of local plate lines. This segmentation allows selective voltage application to minimize charge disturbance in unselected ferroelectric cell capacitors while maintaining data reliability.
Solution Approach 2:
Different voltage levels are applied to different groups of local plate lines based on their selection status. The first local plate line driver applies a first voltage to selected local plate lines while the second local plate line driver applies a second voltage to unselected local plate lines, creating local quality differences that prevent charge disturbance in unselected cells.
2Power
If high voltage is applied to all local plate lines during read/write operations, then read/write operations are ensured, but power consumption increases due to charge disturbance in unselected ferroelectric cell capacitors
Solution Approach 1:
The local plate line driver system is divided into multiple independent drivers that can selectively apply voltages to different groups of local plate lines. This allows high voltage to be applied only where needed for selected memory cells during read/write operations, while unselected cells receive lower voltages, thereby reducing overall power consumption.
Solution Approach 2:
Instead of applying high voltage to all local plate lines uniformly, the system applies high voltage only to the extent necessary for the selected memory cells. The first local plate line driver applies high voltage to selected local plate lines, while the second local plate line driver applies lower voltage to unselected local plate lines, avoiding excessive action that would increase power consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances operating performance and reduces power consumption by minimizing charge disturbance in unselected ferroelectric cell capacitors, thereby improving data reliability and efficiency.
Implementation Method 1
ferroelectric memories having ferroelectricity in which internal electric dipole moments are aligned and spontaneous polarization is maintained even if no external electric field is applied
Implementation Method 2
applying a first voltage to a selected first local plate line... applying a second voltage lower than the first voltage to a first unselected plate line... applying the second voltage to a plurality of second local plate lines
Data Source
AI summary
Provided are a nonvolatile memory device including a ferroelectric cell capacitor and an operating method of the nonvolatile memory device. The nonvolatile memory device includes a memory cell array including a first memory cell and a second memory cell, the first memory cell and second memory cell being connected to a selected word line corresponding to an address among a plurality of word lines, a first local plate line driver extending in a first direction in which the plurality of word lines extend and connected to a plurality of first local plate lines parallel to the plurality of word lines, and a second local plate line driver extending in the first direction and connected to a plurality of second local plate lines that are apart from the plurality of first local plate lines in the first direction.