Nonmagnetic Particle Dispersed Ferromagnetic Sputtering Target
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Solution Overview
Problem
Existing sputtering methods face challenges in simultaneously depositing nonmagnetic and ferromagnetic materials with different resistances efficiently, particularly in DC sputtering, where high bulk resistance due to nonconductive materials like oxides and silicides hinders deposition and results in particle generation and quality variation.
Innovation Solution
A nonmagnetic material particle dispersed ferromagnetic material sputtering target is developed, where nonmagnetic particles are finely dispersed with shapes and sizes smaller than 2 μm or having contact points with the ferromagnetic material, preventing grain separation and reducing particle generation, and achieving high relative density through specific sintering and dispersion techniques.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If nonmagnetic materials with insulation property are sputtered together with ferromagnetic materials using RF sputtering, then simultaneous deposition is achieved, but device cost increases and deposition speed decreases
Solution Approach 1:
The patent creates a composite sputtering target where nonmagnetic material particles (oxides, silicides, nitrides, carbides) are dispersed within a ferromagnetic material matrix. This composite structure allows the target to function as a single conductive unit during DC sputtering while depositing both ferromagnetic and nonmagnetic materials simultaneously, resolving the contradiction between simultaneous deposition capability and deposition speed.
Solution Approach 2:
The patent changes the physical state and distribution parameters of nonmagnetic materials by dispersing them as fine particles (0.1-10 μm) throughout the ferromagnetic matrix, rather than attempting to sputter bulk insulating materials. This parameter change enables the system to use DC sputtering (higher deposition speed) instead of RF sputtering (lower deposition speed) while still achieving simultaneous deposition of both material types.
2Productivity
If nonmagnetic material particles are dispersed in ferromagnetic material, then DC sputtering becomes feasible, but particle generation increases
Solution Approach 1:
The patent applies local quality by creating regions with different particle concentrations and sizes within the target. By controlling the dispersion distribution of nonmagnetic particles (with specific emphasis on particles smaller than 2 μm), the target achieves uniform erosion during sputtering, preventing localized stress concentrations that would cause particle generation and arcing.
Solution Approach 2:
The patent segments the nonmagnetic material into fine particles (0.1-10 μm diameter range) dispersed throughout the ferromagnetic matrix. This segmentation prevents the formation of large continuous nonconductive regions that would cause arcing and particle generation, while still providing enough dispersed particles to achieve the desired film composition during sputtering.
3Ease of manufacture
If nonmagnetic material particles larger than 2 μm are used, then target structure is simpler, but grain separation and quality variation increase
Solution Approach 1:
The patent changes the size parameter of nonmagnetic particles to a specific range (0.1-10 μm, with emphasis on particles smaller than 2 μm). This parameter change ensures that particles are small enough to prevent grain separation and maintain uniform film quality, while still being large enough to be practically manufacturable through conventional mixing and sintering processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-speed, high-density DC sputtering with reduced particle and nodule generation, improved mass productivity, and uniform deposition quality, while maintaining low costs and extending target life.
Implementation Method 1
the sputtering method employs a fundamental principle where inert gas is ionized, plasma formed from electrons and positive ions is formed, and the positive ions in this plasma collide with the target (negative electrode) surface. The extruded atoms adhere to the opposing substrate surface, wherein the film is formed.
Implementation Method 2
inert gas is ionized, plasma formed from electrons and positive ions is formed
Data Source
AI summary
Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 μm formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is advantageous in that, in the formation of a film by sputtering, the influence of heating or the like on a substrate can be reduced, high-speed deposition by DC sputtering is possible, the film thickness can be regulated to be thin, the generation of particles (dust) or nodules can be reduced during sputtering, the variation in quality can be reduced to improve the mass productivity, fine crystal grains and high density can be realized, and the nonmagnetic material particle dispersed ferromagnetic material sputtering target is particularly best suited for use as a magnetic recording layer.