FET Protrusion Structure for Short Channel Effect Control
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Solution Overview
Problem
As semiconductor devices shrink below 90 nm, the short channel effect becomes pronounced, leading to increased leakage current and power consumption, as well as difficulties in controlling the sub-threshold swing, making it challenging to manage the size reduction of semiconductor devices effectively.
Innovation Solution
The introduction of a protrusion in the active region of the field effect transistor, surrounded by an isolation layer and with a gate crossing over it, extends the channel to the protrusion, effectively increasing the volume controlled by the gate, thereby reducing the short channel effect by enhancing the driving current and controlling the channel more effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the size of semiconductor devices is shrunk below 90 nm, then power consumption is reduced and response time is shortened, but the short channel effect becomes pronounced leading to increased leakage current
Solution Approach 1:
The patent introduces a protrusion structure that extends the channel length in a specific geometric configuration. By adding this dimensional feature to the active region, the channel length is effectively increased without expanding the overall device footprint, thereby maintaining small device size while reducing leakage current through enhanced channel control
2Productivity
If the size of semiconductor devices is shrunk below 90 nm, then device density is increased, but the short channel effect makes it difficult to control sub-threshold swing
Solution Approach 1:
The protrusion structure adds a geometric dimension to the channel configuration, extending the channel length while maintaining compact device footprint. This dimensional modification enhances gate control over the channel, improving sub-threshold swing characteristics without sacrificing device density
3Ease of manufacture
If the channel length is reduced to shrink device size, then manufacturing cost is reduced, but the short channel effect increases leakage current and power consumption
Solution Approach 1:
The protrusion structure provides a geometric solution that increases channel length without proportionally increasing device area. This allows maintaining cost-effective small device sizes while the extended channel geometry reduces leakage current through improved electrostatic control
Data Source
AI summary
A field effect transistor includes a substrate, an isolation layer, a gate, a channel, drain and a source. The substrate has an active region having a rectangular area and at least one protrusion protruded from the rectangular area. The isolation layer is formed on the substrate and encircling the active region. The gate crosses the active region and is formed above a middle portion of the active region. The channel is formed in the active region directly under the gate, extends to the at least one protrusion, and divides the active region into a first section and a second section. The drain formed in the first section and the source formed in the second section.