Radiation Controlled Devices TRIZ Cases

A dual photosensitive image sensor integrates a wire grid polarizer on one region to reject reflected glare while maintaining high sensitivity.

A folded tape package uses a flexible substrate to stack dies and passive components in a compact parallel configuration.

A radiation detector uses filter layer structures to absorb specific wavelengths for tailored spectral sensitivity.

A UBM electrode structure with enhanced Pt adhesion on CdTe substrates prevents peeling during solder bonding.

Segmenting the pixel and peripheral circuit regions allows independent power supply potentials to reduce consumption while maintaining image quality.

A radiation detector segments pixel groups with distinct discriminator thresholds to count events across multiple energy intervals simultaneously.

Demodulation pixels share a common aperture to increase sensitivity and resolution in time of flight distance sensors.

A frame structure supports a sensor chip on a substrate to enable stable wire bonding connections.

A photoreceptor circuit relocates contact pads to the processing unit region, enabling flip-chip mounting via metal bumps.

An accumulation layer on the second principal surface reduces dark current while the irregular asperity improves near-infrared spectral sensitivity.

A resonant cavity with dielectric mirrors extends the effective optical path length, boosting quantum efficiency at 940 nm while preventing pixel crosstalk.

A support member with an asymmetric recess positions a substrate to minimize footprint while preventing resin infiltration.

Metal dummy patterns in the back-end-of-line layer provide uniform material distribution for image sensor fabrication.

A monolithic 3D image sensor stacks photosensitive and active device levels to achieve high photoconductive gain.

A vertical transistor employs a graded drift region with segmented impurity zones to resolve the trade-off between breakdown voltage and ON resistance.

Curved convex photodiode structures expand the light-receiving area within a fixed pixel footprint, resolving signal intensity loss during pixel size reduction.

Backside trenches with field isolation implants reduce carrier recombination and crosstalk in backside illuminated image sensors.

Varying micro-lens heights via a shifted mask reduces cross talk and improves quantum efficiency in image sensors.

An epitaxial shielding layer blocks ambient back light, eliminating mechanical coating risks and fabrication complexity.

Applying forward bias during infrared detector cooling fills electron traps, reducing noise and atypical pixel behavior without complex calibration.

A SPAD photodiode uses a sub-wavelength resonant grating to concentrate the electromagnetic field in the avalanche zone.

A sensor chip stack uses sidewall metallization to connect semiconductor layers while a molding material provides mechanical rigidity.

A stacked electrode structure with a barrier metal layer prevents interdiffusion between Schottky and outermost surface electrodes.

A field effect transistor with an active region protrusion extends the channel length to enhance gate control over electrical charges.

Replacing switching FETs with a MOS capacitor reduces leakage currents and noise coupling in CMOS X-ray sensors.

Radially varying curvature molds bend photonic sensor chips to match optical designs while reducing bending stress at inactive outermost regions.

Segmented guard rings with steep dopant gradients restrict the electric field, reducing dark count rates and increasing photon detection probability.

Shielding structure reduces readout node capacitance, increasing signal voltage and lowering noise for better low-light image quality.

Pores with varying diameters act as wavelength-specific filters to direct electromagnetic radiation toward a single photodiode for precise detection.

An imaging pixel applies in-pixel feedback via a dedicated transistor to suppress kTC noise, reducing device complexity while maintaining signal integrity.

Processor defines sub-pixels and applies location-specific calibration parameters to correct inhomogeneous charge collection across the detector array.

A pinned photodiode pixel architecture creates an internal avalanche region to amplify weak optical signals without adding external circuitry.

Protrusions on the mold seal surface maintain adhesive thickness, preventing void defects caused by thermal expansion differences.

A semiconductor detector uses a doped third region to trap charge carriers and guide them toward the collecting junction.

Double metallurgical junctions with asymmetric depletion zones reduce potential barrier requirements for THz rectification.

A back-illuminated photodiode absorbs light through its bottom side to enable independent thermal processing of the sensor and logic substrates.

A 3D separation pixel structure positions the photodiode on a top wafer layer to capture light at varying angles without micro lenses.

Avalanche photodiode array uses segmented peripheral and relay wiring to reduce signal path resistance.

A CMOS image sensor uses a superlattice channel to reduce charge carrier effective mass and enhance mobility.

Individual analog readout channel wells electrically isolate detector pixels, reducing crosstalk and noise contamination in CT scanner arrays.

Deep trench isolation walls separate photodiodes from storage devices, while surface texture patterns increase light paths to reduce environmental interference.

Pixel overflow unit stores excess charge in capacitance, resolving noise and complexity trade-offs for wider dynamic range.

Masked implantation creates doped transfer gates for image sensors, avoiding lattice defects and dark current in charge-to-voltage conversion regions.

A solid-state imaging element uses a transferring section and unnecessary charge discharging gate to manage electrical charge flow.

Back-illuminated solid-state imaging device with optical waveguide between substrate and conversion film.

Parallel zone readout in a SPAD ToF array bypasses serial evaluation bottlenecks, enabling faster gesture tracking and multi-target position determination.

Vertical stacking of light-sensitive oxide semiconductor layers reduces pixel size while maintaining high color separation accuracy.

N-type dopants with a high segregation coefficient accumulate at the sensor layer interface, reducing dark current and enhancing quantum efficiency.

Diffraction-based color separation elements replace absorption filters to overcome low light utilization efficiency in image sensors.

A backside illuminated imaging sensor incorporates an infrared detecting layer to capture light signals.