FET Voltage Reference Circuit With Near-Zero Temperature Coefficient

The voltage reference circuit is segmented into multiple stacked gate devices (first stacked gate device, second stacked gate device, third stacked gate device) with distinct functions. Each device comprises multiple field-effect transistors connected in series, allowing independent optimization of temperature compensation without compromising overall circuit performance. This segmentation enables precise temperature coefficient control while maintaining miniaturization benefits.

The patent utilizes parameter changes in the stacked gate devices by varying the number of field-effect transistors in each stack (different numbers of series-connected transistors) to achieve complementary temperature dependencies. The gate-to-source voltages are engineered to have opposite temperature coefficients, and by adjusting transistor counts and device dimensions, the circuit achieves near-zero overall temperature coefficient despite miniaturized dimensions.

Multiple field-effect transistors are merged into stacked gate devices with common gate terminals, combining their temperature-sensitive characteristics to generate complementary voltage responses. The first, second, and third stacked gate devices are combined in the voltage reference circuit to produce gate-to-source voltages that compensate for each other's temperature drift, achieving precise temperature control through unified device operation.

The stacked gate devices utilize their own inherent temperature-dependent electrical characteristics to automatically compensate for temperature variations. The gate-to-source voltages generated by the stacked devices inherently contain complementary temperature coefficients, eliminating the need for external temperature sensing or complex control mechanisms. The circuit self-regulates temperature effects through the natural physical properties of the field-effect transistors.