Electric Variable Regulation TRIZ Cases

A differential current feedback path flattens bandgap reference voltage bending at high and low temperatures for more accurate circuit operation.

A leakage cancellation circuit injects or extracts current at a MOSFET node to stabilize output voltage and current capability at high temperature.

Grounded switch branches trim a floating degeneration resistor for precise low-voltage reference current generation with low power.

Switching is enabled only when feedback and switch-node voltages indicate demand, reducing idle energy waste while keeping output power responsive.

A native transistor and cascode pair stabilize reference current and voltage against temperature and supply shifts, improving sensor oscillator accuracy.

A digital assist loop senses analog LDO operating state to preserve PSRR, bandwidth, and low quiescent current near dropout.

A fast transient feedback path helps an LDO regulator correct output voltage dips and spikes with less overshoot and quicker recovery.

By subtracting a PTAT resistor drop from Zener voltage, this circuit cuts op-amp noise and temperature drift for more accurate reference output.

A pre-regulator plus dual-loop LDO handles high input voltage while improving transient response and PSRR without external capacitors.

A fast and slow feedback LDO regulator stabilizes abrupt output-voltage changes while reducing reliance on large output capacitors.

A replica-transistor compensation circuit corrects collector current mismatch, keeping bandgap reference voltage stable across PVT variation.

Adaptive bias current injection boosts LDO PSRR across frequencies and load currents while avoiding the quiescent current penalty of large static bias.

Using FET gate-to-source behavior, this reference circuit cuts chip area versus bandgap designs while maintaining stable output and fast transients.

FFT and THD analysis detect idle, charging, and audio modes so power supplies can trim voltage and current, cutting waste and heat.

Capacitive feed-forward ripple cancellation improves LDO PSRR at high frequencies while keeping quiescent current low and stability intact.

A beta-multiplier start-up path and comparator stabilize bandgap reference generation across supply, process, and temperature changes.

Hardware tied to clock-gating signals switches LDO bias and bandwidth, meeting peak current demand while keeping average current low.

A two-stage LDO with feedforward and feedback paths cuts load-step overshoot and undershoot while preserving steady-state voltage stability.

Dynamic bias shifting with overvoltage protection keeps a dual-rail LDO within COA limits during power-up while enabling instant startup.

Selectable diode-connected transistors tune PTAT and CTAT branches to correct temperature curvature with lower circuit area and power.

A fast comparator-capacitor loop plus op-amp feedback cuts LDO output ripple under load changes without adding large capacitance or area.

Multiple temperature compensation modules with different coefficients are summed to keep output voltage continuous and stable across large temperature changes.

Using an NMOS pass device with sensing and voltage inversion, this regulator cuts capacitor area while improving settling and PSRR.

A flipped-gate transistor and current mirrors create a zero-temperature-coefficient reference voltage while blocking substrate noise.

Current-mirror feedback filters load transients from charge pumps, helping implantable stimulator regulators hold a stable output voltage.

A replicated and polarity-reversed aggressor current lets an LDO suppress shared supply noise without large bypass capacitors.

A MOS transistor and switch hold the LDO drive node during startup to suppress inrush current while cutting circuit area.

Stacked FET gate devices combine CTAT and PTAT voltages with bias-current compensation to stabilize reference voltage across temperature.

Multiple current mirror stages replace series diode-connected transistors to keep bias voltages precise and stable across a wider input range.

Coordinated zero adjustment in the bandgap and amplifier stages improves intermediate-frequency power supply rejection for RF chips.

Using parasitic PMOS capacitance, this LDO achieves fast transient response and stable on-chip regulation without external capacitors.

A control unit disconnects a compensation capacitor in standby to separate pole locations, improving LDO loop stability and limiting voltage fluctuation.

A negative-threshold transistor enables bandgap self-starting without auxiliary circuitry, cutting chip area and power waste at nanoamp currents.

A look-ahead droop predictor and adaptive biasing help this LDO stabilize output under load swings, even at input voltages down to 0.4 V.

A voltage-comparing backflow prevention circuit switches substrate and control nodes to stop parasitic diode conduction when LDO output exceeds input.

PMOS current sourcing, NMOS mirroring, and decoupling capacitors stabilize RF bias current while cutting noise and power use.

Local on-chip heating and thermal feedback trim a voltage reference for low drift, faster calibration, and safer die temperature control.

Voltage-based selection between low- and high-voltage bandgap circuits keeps reference output accurate across multiple power supply domains.

Multiple comparators and bi-directional drivers keep LDO output stable near dropout while enabling current sourcing, sinking, and step control.

Using one supply, a regulator generates floating and fixed reference rails that track voltage variation and protect mixed-voltage transistors.

A beta-compensated PTAT current offsets CMOS BJT beta nonlinearity to keep reference voltage stable across process, voltage, and temperature.

A buffer drives the transistor body to match source voltage, cutting nonlinear parasitic capacitance and improving bandwidth and linearity.

A subthreshold MOS and parasitic PNP hybrid circuit combines bandgap reference and digital temperature sensing with lower power and linear output.

Weighted reverse and forward embedded Zener voltages compensate temperature drift while reducing stress-induced output voltage fluctuation.

ADC or window-comparator feedback adjusts DAC reference voltage to keep a source follower regulator stable across process and temperature shifts.

A constant-current pass element and output buffer shunt excess current to cut ICC emissions and stabilize IC operation without bypass capacitors.

Constant base current bias restores bandgap voltage while reducing BJT VBE and β sensitivity to process variation.

CTAT/PTAT subcircuits, biasing, and an adjustable divider flatten bandgap curvature to hold voltage reference TC near 10 ppm/°C.

A hybrid ZTC and PTAT bias circuit boosts current at high temperatures while preserving stable IC signal levels across temperature changes.

Using transistors with different threshold voltages, this circuit generates a temperature-stable bandgap reference with fewer doping steps and lower supply voltage.

A voltage setting circuit boosts drive voltage in bypass mode, cutting transistor resistance and avoiding ADC-based detection overhead.

A DAC-adjusted load current helps an LDO limit voltage undershoot during high-to-low DVS transitions while shortening settling time.

A gate boosting and precharge scheme lets an NMOS LDO respond quickly to load transients while reducing ripple and large compensation capacitors.

A switch array precharges transistor nodes and then shares charge to reach bias voltage quickly, reducing start-up delay and energy waste.

A feedback regulator using an NMOS stage and bipolar current mirror keeps output voltage accurate across load, supply, and temperature shifts.

Comparator feedback adjusts switch frequency as capacitor leakage changes, maintaining reference voltage accuracy with lower power use.

Gradual power-switch turn-on helps a linear regulator change between 3.3V and 1.8V outputs with lower spike current and steadier supply behavior.

An input amplifier varies control-voltage slew rate with load current to curb LDO output spikes while limiting supply-line disturbance.

Uses current mirroring and voltage division to generate a lower bandgap reference voltage while preserving temperature independence, low power, and small area.

A reconfigurable reverse-isolation circuit lets a series-shunt LDO balance high PSRR, ripple response, leakage current, and power use.

Measured current and winding voltages are used to infer tap position without extra sensors, improving voltage regulator reliability and maintenance.

A dual-path DLDO uses fast error feedback to stabilize low-headroom FRAM power while limiting quiescent current and output ripple.

Dynamic charge pump control raises LDO headroom only when needed, cutting dropout loss and heat while protecting operation across input voltages.

By combining positive- and negative-temperature-coefficient current paths, this circuit stabilizes oscillator timing across temperature and supply changes.

A resistor-and-transistor bias circuit adds Vshift to keep low-threshold current mirrors in saturation across temperature changes.

Parallel bias modules generate staged reference currents to correct differential amplifier offset with high accuracy and lower circuit area.

A delayed reference path with comparator and latch logic limits regulator start-up overshoot while cutting soft-start circuit size and cost.

By recalculating bandcenter and band edges, LTC and VR controllers achieve more accurate emergency voltage reduction without bandwidth limits.

A flipped-gate transistor and leakage compensation scheme stabilize reference voltage accuracy against substrate noise and high-temperature drift.

Dynamic bias switching lets an LDO deliver brief high current for digital isolators while limiting external power draw and energy use.

A single NFET in each regulator power path handles source selection and regulation, cutting IC area and preventing back power leakage.

Source degeneration in current mirrors cuts mismatch-driven temperature drift and enables tunable reference current or voltage in low-power bandgap circuits.

Extra current is applied only during regulator start-up to charge capacitors faster, then disconnected to keep normal power use low.

Current mirrors and a flipped-gate transistor suppress substrate noise and leakage drift to keep reference voltage accurate across temperature.