Field Dispersion Layer Layout for Stable High-Voltage Semiconductors
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining stable electric characteristics and reliability, particularly in high-voltage and high-current applications, with issues related to two-dimensional electron gas distribution and electric field concentration leading to potential degradation.
Innovation Solution
A semiconductor device design incorporating a channel layer with a channel suppression region, a barrier layer with a different energy band gap, a gate electrode, a protective layer, source and drain electrodes, and a field dispersion layer with a protruding portion to manage two-dimensional electron gas and disperse electric fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor device structure is used, then manufacturing is simpler, but electric characteristics become unstable and reliability decreases at high voltage and high current
Solution Approach 1:
The device is segmented into distinct functional regions including a channel layer with channel suppression regions, a barrier layer with doping regions, and a field dispersion layer with protruding portions. Each segment performs a specific function to collectively improve reliability under high voltage and current conditions.
Solution Approach 2:
Different regions of the device are given different local properties: the channel suppression regions have suppressed two-dimensional electron gas for reduced leakage, the doping regions in the barrier layer have specific carrier concentrations for electric field control, and the field dispersion layer has protruding portions for localized electric field management. This local differentiation enables stable electric characteristics throughout the device.
2Power
If the device handles high voltage and high current, then power handling capability increases, but leakage current increases and breakdown voltage decreases
Solution Approach 1:
The invention converts the harmful concentration of electric field at sharp corners into a beneficial distributed electric field. The field dispersion layer with protruding portions transforms the harmful field concentration that would cause breakdown into a beneficial distributed field pattern that enhances power handling while reducing leakage current through controlled field distribution.
Solution Approach 2:
The channel suppression regions and doping regions are configured in advance to counteract the formation of excessive two-dimensional electron gas and prevent harmful leakage current before it occurs. The protruding portions of the field dispersion layer are positioned preliminarily to dispers e electric fields before they reach concentrations that would cause breakdown, enabling the device to handle high power with reduced leakage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances stability and reliability by suppressing two-dimensional electron gas in specific regions and dispersing electric fields, reducing leakage current and increasing breakdown voltage, thus improving performance in high-power applications.
Implementation Method 1
a barrier layer positioned above the channel layer and including a material having an energy band gap different from the channel layer
Implementation Method 2
a field dispersion layer positioned on the protective layer, protruded from an edge adjacent to the drain electrode toward the drain electrode
Implementation Method 3
the channel layer includes a channel suppression region in which the two-dimensional electron gas is suppressed
Data Source
AI summary
A semiconductor device includes a channel layer including a channel suppression region, a barrier layer positioned above the channel layer and including a material having an energy band gap different from the channel layer, a gate electrode positioned above the barrier layer, a protective layer positioned above the gate electrode, a source electrode and drain electrode positioned on both sides of the gate electrode and connected to the channel layer, and a field dispersion layer positioned on the protective layer, protruded from an edge adjacent to the drain electrode toward the drain electrode, and including a protrusion portion adjacent to the channel suppression region.