Field-Effect P-N Junctions via Self-Gating Feedback
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Solution Overview
Problem
Current photovoltaic technologies face a cost to efficiency tradeoff, with limited architectures for charge separation and reliance on energy-intensive doping processes that can damage crystals and result in device instability, particularly for hard-to-dope semiconductors like metal oxides and sulfides.
Innovation Solution
The development of screening-engineered field-effect photovoltaic (SFPV) architectures that use a self-gating feedback loop and minimal screening of the gate field by the top contact, allowing for high-quality field-induced p-n junctions in a wide variety of semiconductors, including difficult-to-dope materials, without the need for external doping or additional electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If energy-intensive doping processes are used to create p-n junctions, then charge separation efficiency is improved, but manufacturing cost increases and crystal damage occurs
Solution Approach 1:
The patent replaces the mechanical/chemical doping process with an electric field-based approach. A gate electrode applies an external electric field to the semiconductor layer, inducing charge accumulation or depletion at the interface to form field-effect p-n junctions. This substitution eliminates the need for high-energy ion implantation or thermal diffusion processes, reducing manufacturing cost and avoiding crystal damage while achieving the same charge separation function.
Solution Approach 2:
The patent changes the fundamental parameter for creating p-n junctions from material composition (doping concentration) to electric field strength (gate voltage). By controlling the gate voltage parameter, the device can dynamically adjust the charge distribution and junction characteristics without any physical modification to the semiconductor crystal structure, enabling low-cost fabrication and device reconfigurability.
2Reliability
If doping processes are used to create p-n junctions, then charge separation is achieved, but device instability increases due to crystal damage
Solution Approach 1:
The patent replaces the mechanical/chemical doping process with an electric field-based approach. A gate electrode applies an external electric field to the semiconductor layer, inducing charge accumulation or depletion at the interface to form field-effect p-n junctions. This substitution eliminates the need for high-energy ion implantation or thermal diffusion processes, reducing manufacturing cost and avoiding crystal damage while achieving the same charge separation function.
3Reliability
If traditional photovoltaic architectures are used, then charge separation is achieved, but the number of fundamental architectures remains limited
Solution Approach 1:
The patent creates a universal field-effect photovoltaic architecture that can be applied to diverse semiconductor materials including silicon, metal oxides, and sulfides. The gate-controlled field-effect junction provides a common operational mechanism that adapts to different material systems, enabling charge separation in previously unusable hard-to-dope semiconductors and significantly expanding architectural versatility beyond traditional p-n and heterojunction designs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of high-efficiency, scalable, and cost-effective single junction photovoltaics by controlling electrode screening and utilizing the gate field to create p-n junctions, reducing the reliance on Schottky barriers and allowing for the use of previously unusable semiconductors, thereby enhancing stability and efficiency while minimizing energy consumption.
Implementation Method 1
utilizing the gate field to create p-n junctions
Implementation Method 2
high-efficiency, scalable, and cost-effective single junction photovoltaics
Implementation Method 3
The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate
Implementation Method 4
reducing the reliance on Schottky barriers
Data Source
AI summary
This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.