Field Emission Package Structure for Current Density and Arc Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing field emission elements face reliability issues due to probe deformation and arcing, with n-type silicon probes having high current densities but low reliability, and p-type probes limiting current density, while transistor-based solutions complicate manufacturing and reduce probe density.
Innovation Solution
A package structure integrating a p-type wafer with an LED (or LD) using a silicon on insulator (SOI) wafer, with protruding portions and controlled gate voltage to manage current density and reliability, featuring a buried layer, insulating and metal regions, and light-emitting elements to control electron emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If n-type silicon probes are used to achieve high current density, then current density is improved, but reliability deteriorates due to arcing and probe deformation
Solution Approach 1:
The patent changes the electrical parameter of the probe material from n-type to p-type silicon, which fundamentally alters the carrier type from electrons to holes. This parameter change prevents the arcing phenomenon while maintaining field emission capability through the p-n junction structure formed with the n-type emitter layer
Solution Approach 2:
The patent employs a composite structure combining p-type silicon substrate with n-type emitter layer to form a p-n junction. This composite material approach allows the system to benefit from both material types: the p-type provides stability and prevents arcing, while the n-type enables high current density through electron emission
2Reliability
If p-type silicon probes are used to improve reliability, then reliability is improved, but current density deteriorates due to lack of electrons for emission
Solution Approach 1:
The patent employs a composite structure combining p-type silicon substrate with n-type emitter layer to form a p-n junction. This composite material approach allows the system to benefit from both material types: the p-type provides stability and prevents arcing, while the n-type enables high current density through electron emission
Solution Approach 2:
The patent applies local quality by creating an n-type emitter layer specifically at the probe tip region where electron emission is needed, while the bulk substrate remains p-type for stability. This localized n-type region provides electrons for field emission without compromising the overall reliability provided by the p-type substrate
3Reliability
If transistor-based control is used to manage current, then reliability is improved, but device complexity increases and probe density decreases
Solution Approach 1:
The patent implements self-service by designing the p-n junction structure to inherently limit current through its physical properties rather than requiring external transistor control. The junction's built-in potential and carrier generation mechanisms automatically regulate current flow, eliminating the need for additional control components
Solution Approach 2:
The patent extracts the current control function from separate transistor components and integrates it directly into the probe structure itself through the p-n junction. This extraction eliminates the need for additional transistors and their associated complexity while maintaining current management capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively controls current density and ensures reliability by preventing excessive current flow through individual probes, enhancing electron emission while maintaining high current density.
Implementation Method 1
at least one light-emitting element disposed in a lower region of the device layer, and configured to emit light through the device layer
Data Source
AI summary
A package having a field emission element may include a handle layer; a buried layer stacked on the handle layer; a device layer stacked on the buried layer; an insulating layer stacked in an upper region of the device layer; a gate electrode stacked in an upper region of the insulating layer; and at least one light-emitting element disposed in a lower region of the device layer, and configured to emit light through the device layer. The insulating layer may be configured with a plurality of insulating regions separated by first separation regions, and the gate electrode may be configured with a plurality of metal regions separated by second separation regions. The device layer may be provided with protruding portions disposed to protrude between the first separation regions between the insulating regions and the second separation regions between the metal regions.