Source/Drain Contact Liner for Stable Low-Capacitance Fin Contacts
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Solution Overview
Problem
As semiconductor devices scale down, there is a need to reduce capacitance and ensure electrical stability between contacts, which existing multi-gate transistor technologies have not adequately addressed.
Innovation Solution
A method for fabricating semiconductor devices involves forming source/drain patterns on fin-type patterns, using an etch stop film and interlayer insulating film, and performing ion implantation with a sacrificial liner, followed by forming a contact liner with silicon, oxygen, and carbon to create stable source/drain contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the pitch size of the semiconductor device is decreased to increase density, then device density is improved, but capacitance increases and electrical stability between contacts deteriorates
Solution Approach 1:
A contact liner is introduced as an intermediary layer between the source/drain contact and the surrounding structures. This contact liner acts as a mediator that provides electrical stability and reduces capacitance coupling between adjacent contacts, enabling high-density device布局 while maintaining reliable electrical performance.
Solution Approach 2:
The patent modifies material parameters by using specific compositions for the contact liner (including silicon, oxygen, and carbon) and controlling the ion implantation parameters. These parameter changes optimize the electrical properties and capacitance characteristics of the contact structures, allowing reduced pitch sizes while maintaining electrical stability.
2Reliability
If multi-gate transistor structures are used to improve current control and reduce short channel effect, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is segmented into distinct stages with specialized liners for different functions: a sacrificial liner for ion implantation protection and a contact liner for electrical stability. This segmentation allows complex multi-gate structures to be manufactured through manageable, modular process steps, reducing overall manufacturing complexity while maintaining performance benefits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves device performance and reliability by enhancing current control and reducing the short channel effect, while maintaining electrical stability and reducing capacitance.
Implementation Method 1
performing an ion implantation process while the sacrificial liner is present, the ion implantation process including implanting impurities into the source/drain pattern
Data Source
AI summary
A method for fabricating semiconductor device may include forming a source/drain pattern on a fin-type pattern, forming an etch stop film and an interlayer insulating film on the source/drain pattern, forming a contact hole in the interlayer insulating film, forming a sacrificial liner along a sidewall and a bottom surface of the contact hole, performing an ion implantation process while the sacrificial liner is present, removing the sacrificial liner and forming a contact liner along the sidewall of the contact hole, and forming a source/drain contact on the contact liner. The ion implantation process may include implant impurities into the source/drain pattern. The source/drain contact may be connected to the source/drain pattern.