Fin-Type Active Region Layout With Non-Uniform Fin Pitch
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Solution Overview
Problem
Current semiconductor manufacturing methods face challenges in achieving high integration density and efficient interconnection structures for compact, high-performance electronic products, which limits the operating speed and functionality of semiconductor devices.
Innovation Solution
A method involving the formation of fin groups and dummy fin groups on a substrate using mandrel patterns and spacers, with specific pitch arrangements to create non-uniform fin pitches, allowing for increased integration density and efficient patterning of semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If uniform fin pitch is used for high integration density, then manufacturing complexity increases due to difficulty in achieving non-uniform pitches, but device performance and operating speed improve
Solution Approach 1:
The substrate is divided into multiple regions with different fin pitch requirements. First and second fin groups are formed with a first pitch, while third and fourth fin groups are formed with a second pitch. This segmentation allows each region to be optimized independently for its specific functional requirements, achieving both high integration density and device performance without excessive manufacturing complexity.
Solution Approach 2:
Different fin pitch values are applied to different regions of the substrate based on local performance requirements. The first and second fin groups use one pitch while the third and fourth fin groups use another pitch, allowing local optimization of device characteristics such as operating speed and integration density in specific areas rather than applying a uniform pitch across the entire substrate.
2Productivity
If non-uniform fin pitches are implemented to optimize device performance, then manufacturing precision requirements increase, but integration density and operating speed improve
Solution Approach 1:
Mandrel patterns are formed first as templates before the actual fin structures are created. These mandrels establish the precise pitch requirements in advance, allowing subsequent spacer formation and fin patterning to follow predetermined spacing. This preliminary action ensures that non-uniform pitches are achieved with high precision without requiring complex real-time control during fin formation.
Solution Approach 2:
Spacers are used as intermediary structures to transfer the pitch information from mandrel patterns to the final fin structures. The spacers are formed on the mandrels and then used as masks to define the fin positions, ensuring precise pitch control. This intermediary step decouples the pitch definition from the fin formation, making it easier to achieve high manufacturing precision for non-uniform pitches.
3Speed
If multiple fin groups with different pitches are formed, then device functionality and operating speed improve, but the number of manufacturing steps increases
Solution Approach 1:
Multiple fin groups with different pitch requirements are formed using a combined patterning approach. The method merges the formation of first, second, third, and fourth fin groups into a unified process sequence using shared mandrels and spacers, rather than treating each fin group as a separate manufacturing operation. This reduces the total number of steps while still achieving the desired non-uniform pitch structure for optimized device functionality and operating speed.
Data Source
AI summary
A method of manufacturing a semiconductor device includes: forming a plurality of first mandrel patterns at a first mandrel pitch on a substrate; forming a first fin group and a first dummy fin group by patterning the substrate, wherein the first fin group is adjacent to the first dummy fin group in a first direction; and removing the first dummy fin group, wherein the first fin group includes a first fin and a second fin adjacent to each other and arranged at a first fin pitch in the first direction. The first dummy fin group includes a first dummy fin and a second dummy fin adjacent to each other and arranged at the first fin pitch in the first direction. The second fin and the first dummy fin, which is adjacent to the second fin, are arranged at a second fin pitch that is greater than the first fin pitch.